Silicon Carbide Schottky Diode MICROCHIP MSC050SDA120S Designed for High Frequency Power Applications
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Product Description
Product Overview
The MSC050SDA120S is a Zero Recovery Silicon Carbide Schottky Diode designed for high-frequency applications. It offers low forward voltage, low leakage current, and crucially, no reverse or forward recovery, leading to high switching frequencies, reduced switching losses, and lower EMI. This diode enhances system reliability and power density, making it suitable for power factor correction, anti-parallel diode applications, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide Schottky
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | |||
| Maximum working peak reverse voltage | VRWM | |||
| Maximum DC forward current | IF | 109 | A | TC = 25 C |
| 49 | A | TC = 135 C | ||
| 41 | A | TC = 145 C | ||
| Repetitive peak forward surge current | IFRM | 154 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | 290 | A | TC = 25 C, tp = 8.3 ms, half sine wave |
| Power dissipation | Ptot | 429 | W | TC = 25 C |
| 186 | W | TC = 110 C | ||
| Operating junction and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Single-pulse avalanche energy | EAS | 100 | mJ | Starting TJ = 25 C, L = 0.08 mH, peak IL = 50 A |
| Junction-to-case thermal resistance | RJC | 0.24 - 0.35 | C/W | |
| Package weight | Wt | 3.9 | g | |
| Forward voltage | VF | 1.5 - 1.8 | V | IF = 50 A, TJ = 25 C |
| 2.1 | V | IF = 50 A, TJ = 175 C | ||
| Reverse leakage current | IRM | 15 - 200 | A | VR = 1200 V, TJ = 25 C |
| 250 | A | VR = 1200 V, TJ = 175 C | ||
| Total capacitive charge | QC | 224 | nC | VR = 600 V, TJ = 25 C |
| Junction capacitance | CJ | 246 | pF | VR = 400 V, TJ = 25 C, = 1 MHz |
| 182 | pF | VR = 800 V, TJ = 25 C, = 1 MHz |
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