Silicon Carbide Schottky Diode 1200 Volt 20 Amp Microchip MSC020SDA120B for High Voltage Applications
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Product Description
Product Overview
The Microsemi MSC020SDA120B is a 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a two-lead TO-247 package. This SiC SBD offers enhanced performance over traditional silicon diodes, reducing the total cost of ownership for high-voltage applications. Its key features include no reverse recovery, low forward voltage, low leakage current, and avalanche-energy rating, leading to benefits such as high switching frequency, low switching losses, reduced EMI, higher reliability, and increased system power density.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Package: TO-247
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Unit | Ratings | Conditions |
| Maximum DC reverse voltage | VR | V | 1200 | |
| Maximum peak repetitive reverse voltage | VRRM | V | 1200 | |
| Maximum working peak reverse voltage | VRWM | V | 1200 | |
| Maximum DC forward current | IF | A | 49 | TC = 25 C |
| Maximum DC forward current | IF | A | 22 | TC = 135 C |
| Maximum DC forward current | IF | A | 18 | TC = 145 C |
| Repetitive peak forward surge current | IFRM | A | 64 | TC = 25 C, tp = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | A | 115 | TC = 25 C, tp = 8.3 ms, half sine wave |
| Total power dissipation | PTOT | W | 186 | TC = 25 C |
| Total power dissipation | PTOT | W | 80 | TC = 110 C |
| Single-pulse avalanche energy | EAS | mJ | 100 | Starting TJ = 25 C, peak IL = 20 A |
| Junction-to-case thermal resistance | RJC | C/W | 0.95 | Max |
| Junction-to-case thermal resistance | RJC | C/W | 0.65 | Typ |
| Operating junction and storage temperature range | TJ, TSTG | C | 175 | Max |
| Lead temperature for 10 seconds | TL | C | 300 | |
| Package weight | Wt | g | 6.2 | Typ |
| Mounting torque, 6-32 or M3 screw | N-m | 1.1 | Max | |
| Mounting torque, 6-32 or M3 screw | lbf-in | 10 | Max | |
| Forward voltage | VF | V | 1.8 | IF = 20 A, Max |
| Forward voltage | VF | V | 1.5 | IF = 20 A, Typ |
| Forward voltage | VF | V | 2.1 | IF = 20 A, TJ = 175 C, Max |
| Reverse leakage current | IRM | A | 200 | VR = 1200 V, Max |
| Reverse leakage current | IRM | A | 6 | VR = 1200 V, Typ |
| Reverse leakage current | IRM | A | 100 | VR = 1200 V, TJ = 175 C, Max |
| Total capacitive charge | QC | nC | 91 | VR = 600 V, Max |
| Junction capacitance | CJ | pF | 1130 | VR = 1 V, = 1 MHz, Max |
| Junction capacitance | CJ | pF | 91 | VR = 400 V, = 1 MHz, Max |
| Junction capacitance | CJ | pF | 74 | VR = 800 V, = 1 MHz, Max |
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