China Soft recovery rectifier MICROCHIP APT75DQ120BG diode suitable for snubber clamp and freewheeling diode roles for sale

Soft recovery rectifier MICROCHIP APT75DQ120BG diode suitable for snubber clamp and freewheeling diode roles

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Product Description

Product Overview

The APT75DQ120BG is an ultrafast soft recovery rectifier diode designed for high-frequency applications. It offers low forward voltage, low leakage current, and avalanche energy rating, making it suitable for power factor correction, switch-mode power supplies, inverters/converters, motor controllers, and as a freewheeling or snubber/clamp diode. Its benefits include high switching frequency, low switching losses, reduced EMI, and increased system reliability and power density.

Product Attributes

Brand: Microsemi
Certifications: RoHS compliant, AEC-Q101 qualified

Technical Specifications

Parameter	Symbol	Ratings	Unit	Test Conditions
Maximum DC reverse voltage	VR	1200	V
Maximum peak repetitive reverse voltage	VRRM	1200	V
Maximum working peak reverse voltage	VRWM	1200	V
Maximum average forward current	IF(AV)	75	A	T_C = 112 C, duty cycle = 0.5
RMS forward current	IF(RMS)	121	A
Non-repetitive forward surge current	IFSM	540	A	T_J = 45 C, 8.3 ms
Avalanche energy	EAVL	20	mJ	1 A, 40 mH
Operating and storage temperature range	T_J, T_STG	55 to 175	C
Lead temperature for 10 seconds	T_L	300	C
Junction-to-case thermal resistance	R_JC	0.31	C/W
Package weight	Wt	6.2	g
Maximum mounting torque		1.1	N-m
Forward voltage	V_F	2.8 - 3.3	V	I_F = 75 A
Forward voltage	V_F	3.5	V	I_F = 150 A
Forward voltage	V_F	2.2	V	I_F = 75 A, T_J = 125 C
Maximum reverse leakage current	I_RM	100	A	V_R = 1200 V
Maximum reverse leakage current	I_RM	500	A	V_R = 1200 V, T_J = 125 C
Junction capacitance	C_J	50	pF	V_R = 200 V
Reverse recovery time	t_rr	32	ns	I_F = 1 A, di/dt = 100 A/s, V_R = 30 V, T_J = 25 C
Reverse recovery time	t_rr	325	ns	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Reverse recovery charge	Q_rr	715	nC	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Maximum reverse recovery current	I_RRM	5	A	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Reverse recovery time	t_rr	420	ns	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery charge	Q_rr	3340	nC	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Maximum reverse recovery current	I_RRM	13	A	I_F = 75 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery time	t_rr	195	ns	I_F = 75 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery charge	Q_rr	5810	nC	I_F = 75 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C
Maximum reverse recovery current	I_RRM	42	A	I_F = 75 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C