Ultrafast soft recovery diode MICROCHIP APT30D120BG ideal choice for inverters and motor controllers

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Product Description

Product Overview

The APT30D120BG is an ultrafast soft recovery rectifier diode designed for various power electronics applications. It features fast recovery times, soft recovery characteristics, low forward voltage, and low leakage, making it ideal for power factor correction, switchmode power supplies, inverters, and motor controllers. Its benefits include reduced switching losses, lower EMI noise, cooler operation, and increased system reliability and power density.

Product Attributes

Brand: Microsemi
Certifications: RoHS compliant

Technical Specifications

Parameter	Value	Unit	Conditions
Maximum DC reverse voltage	1200	V
Maximum peak repetitive reverse voltage	1200	V
Maximum working peak reverse voltage	1200	V
Maximum average forward current	30	A	T_C = 128 C, duty cycle = 0.5
RMS forward current	59	A
Non-repetitive forward surge current	210	A	T_J = 45 C, 8.3 ms
Operating and storage temperature range	55 to 175	C
Lead temperature for 10 s	300	C
Forward voltage	2.0	V	I_F = 30 A
Forward voltage	2.3	V	I_F = 60 A
Forward voltage	1.8	V	I_F = 30 A, T_J = 125 C
Maximum reverse leakage current	250	A	V_R = V_{R rated}
Maximum reverse leakage current	500	A	V_R = V_{R rated}, T_J = 125 C
Junction capacitance	32	pF	V_R = 200 V
Reverse recovery time	31	ns	I_F = 1 A, di/dt = 100 A/s, V_R = 30 V, T_J = 25 C
Reverse recovery time	370	ns	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Reverse recovery charge	660	nC	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Maximum reverse recovery current	5	A	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 25 C
Reverse recovery time	500	ns	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery charge	3450	nC	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Maximum reverse recovery current	12	A	I_F = 30 A, di/dt = 200 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery time	220	ns	I_F = 30 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C
Reverse recovery charge	4650	nC	I_F = 30 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C
Maximum reverse recovery current	37	A	I_F = 30 A, di/dt = 1000 A/s, V_R = 800 V, T_J = 125 C
Junction-to-case thermal resistance	0.61	C/W
Junction-to-ambient thermal resistance	40	C/W
Package weight	5.9	g
Maximum mounting torque	1.1	Nm