MDD Microdiode Semiconductor MMBT3904E NPN transistor in compact SOT23 package for versatile switching

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Product Description

Product Overview

The MMBT3904-E is a general-purpose NPN bipolar transistor in a SOT-23 package. It is designed for a wide range of switching and amplification applications.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Transistor Type: NPN
Construction: Epitaxial Planar Die
Complementary Type: MMBT3906 (PNP)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				200	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			200	mW
Thermal Resistance (Junction to Ambient)	RJA			625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=10A, IE=0	60			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA, IB=0	40			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector Cut-off Current	ICEX	CE V =30V, VEB(off)=3V			50	nA
Collector Cut-off Current	ICBO	CB V = 60V, IE=0			100	nA
Emitter Cut-off Current	IEBO	EB V =5V, IC=0			100	nA
DC Current Gain	hFE	VCE=1V, IC=10mA	100		200
		VCE=1V, IC=50mA		100
		VCE=1V, IC=100mA		60
Collector-Emitter Saturation Voltage	VCE(sat)	IC=50mA, IB=5mA			0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=50mA, IB=5mA			1.1	V
Transition Frequency	fT	CE V =20V,IC=10mA, f=100MHz		300		MHz
Delay Time	td	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35		ns
Rise Time	tr	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=1mA		35		ns
Storage Time	ts	CC V =3V, IC=10mA, IB1= IB2=1mA		200		ns
Fall Time	tf	CC V =3V, IC=10mA, IB1= IB2=1mA		50		ns