NPN transistor MDD Microdiode Semiconductor S8050 with 500 mA collector current and SOT23 package type

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

S8050 TRANSISTOR (NPN)

The S8050 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a continuous collector current of 500 mA and a collector power dissipation of 300 mW. It is complementary to the S8550 transistor.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	(Ta=25 unless otherwise noted)			40	V
Collector-Emitter Voltage	VCEO	(Ta=25 unless otherwise noted)			25	V
Emitter-Base Voltage	VEBO	(Ta=25 unless otherwise noted)			5	V
Collector Current-Continuous	IC	(Ta=25 unless otherwise noted)			500	mA
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)			300	mW
Junction Temperature	Tj	(Ta=25 unless otherwise noted)			150
Storage Temperature	Tstg	(Ta=25 unless otherwise noted)	-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC=50mA	120		400
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA			1.2	V
Transition frequency	fT	VCE=6V, IC=20mA, f=30MHz		150		MHz
DC current gain	hFE(2)	VCE=1V, IC=500mA	50
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A