1200 Volt Silicon Carbide MOSFET Microchip MSC080SMA120S with Stable Operation at High Temperature
Product Overview
The Microchip MSC080SMA120B is a 1200 V, 80 m SiC N-Channel Power MOSFET designed to enhance performance and reduce the total cost of ownership for high-voltage applications. It offers low capacitances, fast switching speeds, stable operation at high temperatures (up to 175 C), a reliable body diode, and superior avalanche ruggedness. This device is ideal for applications requiring high efficiency, compact system design, and simplified driving and paralleling, eliminating the need for external freewheeling diodes.
Product Attributes
- Brand: Microchip
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Ratings | Unit | Characteristic | Test Conditions | Min | Typ | Max |
| MSC080SMA120B | 1200 V, 80 m SiC N-Channel Power MOSFET | |||||||
| VDSS | Drain source voltage | 1200 | V | |||||
| ID | Continuous drain current at TC = 25 C | 40 | A | |||||
| ID | Continuous drain current at TC = 100 C | 28 | A | |||||
| IDM | Pulsed drain current1 | 91 | A | |||||
| VGS | Gate-source voltage | 23 to 10 | V | |||||
| PD | Total power dissipation at TC = 25 C | 231 | W | |||||
| Linear derating factor | 1.54 | W/C | ||||||
| RJC | Junction-to-case thermal resistance | C/W | 0.50 | 0.65 | ||||
| TJ | Operating junction temperature | C | 55 | 175 | ||||
| TSTG | Storage temperature | C | 55 | 150 | ||||
| TL | Lead temperature for 10 seconds | 300 | C | |||||
| Mounting torque, 6-32 or M3 screw | 10 | lbf-in | 1.1 | N-m | ||||
| Wt | Package weight | 0.22 | oz | 6.2 | g | |||
| V(BR)DSS | Drain-source breakdown voltage | 1200 | V | VGS = 0 V, ID = 100 A | ||||
| RDS(on) | Drain-source on resistance1 | 80 | 100 | m | VGS = 20 V, ID = 15 A | |||
| VGS(th) | Gate-source threshold voltage | V | VGS = VDS, ID = 1 mA | 1.9 | 2.8 | |||
| VGS(th)/TJ | Threshold voltage coefficient | mV/C | VGS = VDS, ID = 1 mA | 4.5 | ||||
| IDSS | Zero gate voltage drain current | A | VDS = 1200 V, VGS = 0 V | 100 | ||||
| IDSS | Zero gate voltage drain current | A | VDS = 1200 V, VGS = 0 V, TJ = 125 C | 500 | ||||
| IGSS | Gate-source leakage current | nA | VGS = 20 V/10 V | 100 | ||||
| Ciss | Input capacitance | 1100 | pF | VGS = 0 V, VDD = 1000 V, VAC = 25 mV, = 1 MHz | ||||
| Crss | Reverse transfer capacitance | 6.2 | ||||||
| Coss | Output capacitance | 91 | ||||||
| Qg | Total gate charge | 72 | nC | VGS = 5 V/20 V, VDD = 800 V, ID = 15 A | ||||
| Qgs | Gate-source charge | 12 | ||||||
| Qgd | Gate-drain charge | 19 | ||||||
| td(on) | Turn-on delay time | 21 | ns | VDD = 850 V, VGS = 5 V/20 V, ID = 20 A, Rg(ext) = 4.0 , Freewheeling diode = MSC080SMA120B (VGS = 5 V) (reference Fig. 1-17) | ||||
| tr | Voltage rise time | 10 | ||||||
| td(off) | Turn-off delay time | 19 | ||||||
| tf | Voltage fall time | 16 | ||||||
| Eon | Turn-on switching energy | 362 | J | |||||
| Eoff | Turn-off switching energy | 68 | ||||||
| ESR | Gate equivalent series resistance | 1.9 | f = 1 MHz, 25 mV, drain short | |||||
| SCWT | Short circuit withstand time | 3 | s | VDS = 960 V, VGS = 20 V | ||||
| EAS | Avalanche energy, single pulse | 1000 | mJ | VDS = 150 V, ID = 15 A | ||||
| VSD | Diode forward voltage | V | ISD = 15 A, VGS = 0 V | 4.0 | ||||
| VSD | Diode forward voltage | V | ISD = 15 A, VGS = 5 V | 4.2 | ||||
| trr | Reverse recovery time | 28 | ns | ISD = 20 A, VGS = 5 V, VDD = 800 V, dl/dt = 5100 A/s, Drive Rg = 4 | ||||
| Qrr | Reverse recovery charge | 367 | nC | |||||
| IRRM | Reverse recovery current | 12 | A |
1 Pulse test: pulse width < 380 s, duty cycle < 2%.
2 Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
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