PNP Bipolar Junction Transistor MDD Microdiode Semiconductor S9012 in SOT23 Package for Electronics

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Product Description

Product Overview

The S9012 is a PNP bipolar junction transistor housed in a SOT-23 package. It features high collector current and excellent hFE linearity, making it a complementary part to the S9013 transistor. This device is suitable for various electronic applications requiring amplification or switching.

Product Attributes

Brand: Microdiode
Package Type: SOT-23
Marking: 2T1

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-25	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current-Continuous	IC				-0.5	A
Collector Power Dissipation	PC				0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-100A, IE=0	-40			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-1mA,IB=0	-25			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-100A,IC=0	-5			V
Collector Cut-off Current	ICBO	VCB=-40V, IE=0			-0.1	A
Emitter Cut-off Current	IEBO	VEB=-5V, IC=0			-0.1	A
DC Current Gain	hFE(1)	VCE=-1V, IC=-50mA	120	400
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-500mA, IB=-50mA		-0.6		V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-500mA, IB=-50mA		-1.2		V
Transition Frequency	fT	VCE=-6V, IC=-20mA, f=30MHz		150		MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1MHz			5	pF
Thermal Resistance Junction To Ambient	RJA			416		/W