High frequency low Vce sat transistor MDD Microdiode Semiconductor A1300 10V 2A PNP for strobo flash

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Product Description

Product Overview

The A1300 is a 10V 2A PNP High-Frequency Low Vce(sat) Transistor designed for strobo flash and medium power amplifier applications. It offers high DC current gain, excellent frequency performance, and low saturation voltage.

Product Attributes

Brand: Microdiode Electronics (Shenzhen)
Package: SOT-23-3L

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO			-20		V
Collector-Emitter Voltage	VCEO			-10		V
Emitter-Base Voltage	EBO			-6		V
Collector Current	IC			-2		A
Collector Power Dissipation	PC			750		mW
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55		+150
Collector-emitter breakdown voltage	V(BR)CEO	IE=-1mA, IC=0		-10		V
Emitter-base breakdown voltage	V(BR)EBO	IC=-1mA, IE=0		-6		V
Collector cut-off current	ICBO	VCB=-20V, IE=0			-0.1	uA
Collector cut-off current	ICEO	VEB=-6V, IC=0			-0.1	uA
Emitter cut-off current	IEBO	VCE=-10V, IB=0			-	uA
DC current gain	hFE(1)	VCE=-1V, IC=-500mA		140
DC current gain	hFE(2)	VCE=-1V, IC=-4A		60
Collector-emitter saturation voltage	VCE(sat)	IC=-2A, IB=-50mA		-0.5	-1.5	V
Base-emitter voltage	VBE	IC=-2A, VCE=-1V		-	-0.83	V
Transition frequency	fT	VCE=-1V,IC=-0.5A		120		MHz
Collector-base breakdown voltage	V(BR)CBO	IC=-1mA, IE=0		-20		V
Cob	Cob	VCB=-10V,IE=0, f=1MHz			50	pF