SOT23 package transistor MDD Microdiode Semiconductor S9018 NPN type for amplification and switching
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The S9018 is an NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It is designed for general-purpose amplification and switching applications.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Marking: J8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 30 | V | |||
| Collector-Emitter Voltage | VCEO | 15 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 50 | mA | |||
| Collector Power Dissipation | PC | Ta=25 | 200 | mW | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 30 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 15 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=12V, IE=0 | 50 | nA | ||
| Emitter cut-off current | IEBO | VEB=3V, IC=0 | 100 | nA | ||
| DC current gain | hFE | VCE=5V, IC=1mA | 70 | 190 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 1.4 | V | ||
| Transition frequency | fT | VCE=5V, IC=5mA | 800 | MHz | ||
| Collector cut-off current | ICEO | VCE=12V, IE=0 | 100 | nA | ||
| Thermal Resistance | RJA | From Junction To Ambient | 625 | /W |
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