Power MOSFET MIRACLE POWER MPF16N65A Featuring N Channel Technology and 16A Continuous Drain Current
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Product Description
Product Overview
The MPF16N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring 650V drain-source voltage, 16A continuous drain current, and a typical on-resistance of 0.48 at VGS = 10V. It is designed with Miracle Technology, offering low Crss and fast switching capabilities, and is 100% avalanche tested. This MOSFET is suitable for applications such as adapters, standby power supplies, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Product Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 0.48 | 0.62 | |||
| Drain-Source Voltage | 650 | V | ||||
| Drain Current-Continuous (TC=25C) | 16 | A | ||||
| Drain Current-Continuous (TC=100C) | 10 | A | ||||
| Drain Current-Pulsed | a | 64 | A | |||
| Maximum Power Dissipation (@ TJ =25C) | 34 | W | ||||
| EAS | Single Pulsed Avalanche Energy | b | 845 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | Max. | 3.7 | C/W | ||
| RJA | Thermal Resistance Junction-Ambient | Max | 52 | C/W | ||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | c, VGS = 10V, ID =8.0A | - | 0.48 | 0.62 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 2747 | - | pF |
| Coss | Output Capacitance | - | 224 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 27 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 310V, ID =16A, RG = 24,VGS=10V | - | 38 | - | ns |
| tr | Turn-On Rise Time | - | 52 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 176 | - | ns | |
| tf | Turn-Off Fall Time | - | 68 | - | ns | |
| Qg | Total Gate Charge | VDS = 520V, ID =16A, VGS = 10V | - | 62 | - | nC |
| Qgs | Gate-Source Charge | - | 14 | - | nC | |
| Qgd | Gate-Drain Charge | - | 24 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 16 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 64 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 16A | - | - | 1.2 | V |
| trr | Body Diode Reverse Recovery Time | IF=16A,di/dt=100A/us | - | 476 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 6.9 | - | C | |
Notes:
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. L=10mH, VDD=50V,Ias=13.0A,RG=25ohm Starting TJ=25
c. Pulse width300us; duty cycle2%
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