MDD Microdiode Semiconductor BC81740 NPN Transistor Offering Low Saturation Voltage in Compact SOT23

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Product Description

BC817 SOT-23 Plastic-Encapsulate Transistor

The BC817 is an NPN transistor designed for general AF applications. It offers high collector current, high current gain, and low collector-emitter saturation voltage. Its complementary type is the BC807 (PNP). Available in BC817-16, BC817-25, and BC817-40 variants, it is housed in a SOT-23 package.

Product Attributes

Brand: microdiode
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	MIN	MAX	UNIT
MAXIMUM RATINGS
Collector Base Voltage	VCBO			50	V
Collector Emitter Voltage	VCEO			45	V
Emitter Base Voltage	VEBO			5	V
Collector Current	IC			0.5	A
Power Dissipation	Ptot	(Ta=25 unless otherwise noted)		300	mW
Junction Temperature	Tj			150	OC
Storage Temperature Range	Tstg		-55	+150	OC
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0	50		V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0	45		V
Emitter-base breakdown voltage	VEBO	IE= 1A, IC=0	5		V
Collector cut-off current	ICBO	VCB= 45 V , IE=0		0.1	A
Emitter cut-off current	IEBO	VEB=4V, IC=0		0.1	A
DC current gain	hFE	VCE=1V, IC=100mA	100	600
DC current gain	hFE	VCE=1V, IC=500mA	40
Collector-emitter saturation voltage	VCE(sat)	IC= 500mA, IB= 50mA		0.7	V
Base-emitter saturation voltage	VBE(sat)	IC= 500mA, IB= 50mA		1.2	V
Base-emitter voltage	VBE	VCE= 1 V, IC= 500mA	1.2		V
Collecter capacitance	Cob	VCB=10V ,f=1MHz		10	pF
Transition frequency	fT	VCE= 5 V, IC= 10mA f=100MHz	100		MHz
CLASSIFICATION OF hFE (1)
Rank	BC817-16	Range	100-250
	BC817-25	Range	160-400
	BC817-40	Range	250-600
Thermal Resistance
From Junction To Ambient	R JA		417		OC/W