MDD Microdiode Semiconductor MMBTA42 NPN Transistor Offering High Breakdown Voltage and Performance
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Product Description
MMBTA42 - NPN Transistor
The MMBTA42 is an NPN transistor in a SOT-23 package, designed for applications requiring a low collector-emitter saturation voltage and high breakdown voltage. It serves as a complementary part to the MMBTA92 (PNP) transistor. This device is suitable for general-purpose amplification and switching circuits.
Product Attributes
- Brand: microdiode
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE=0 | 300 | V | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 1mA, IB=0 | 300 | V | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= 100A, IC=0 | 5 | V | |
| Collector Cut-off Current | ICBO | CB V =200V, IE=0 | 0.25 | A | |
| Emitter Cut-off Current | IEBO | EB V = 5V, IC=0 | 0.1 | A | |
| DC Current Gain | hFE(1) | CE V =10V, IC= 1mA | 60 | ||
| hFE(2) | CE V =10V, IC=10mA | 200 | |||
| hFE(3) | CE V =10V, IC=30mA | 100 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=20mA, IB= 2mA | 0.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC= 20mA, IB=2mA | 0.9 | V | |
| Transition Frequency | fT | VCE= 20V, IC= 10mA, f=30MHz | 50 | MHz | |
| Thermal Resistance, Junction to Ambient | RJA | 357 | /mW |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-Base Voltage | VCBO | 300 | V |
| Collector-Emitter Voltage | VCEO | 300 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current Continuous | IC | 0.3 | A |
| Collector Power Dissipation | PC* | 350 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55-150 |
Package Information
| Package | Reel Size | Q'TY/Reel | Box Size | QTY/Box | Carton Size | QTY/Carton |
| SOT-23 | 7' | 3000 | 203203195 mm | 45000 pcs | 438438220 mm | 180000 pcs |
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