MICROCHIP TN2640K4 G N channel enhancement mode DMOS transistor for switching and amplifying circuits
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Product Description
Product Overview
The TN2640 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general-purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Silicon-gate manufacturing process
- Certifications: Pb-free (for SOIC package)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | 400 | V | VGS = 0V, ID = 1 mA | ||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | VGS | 20 | V | |||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| DC Electrical Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | 0.8 | 2 | V | VGS = VDS, ID = 2 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 2.5 | 4 | mV/C | VGS = VDS, ID = 2 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||||
| On-State Drain Current | ID(ON) | 1.5 | 3.5 | A | VGS = 5V, VDS = 25V | |
| 2 | 4 | A | VGS = 10V, VDS = 25V | |||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 3.2 | 5 | VGS = 4.5V, ID = 500 mA | ||
| 3 | 5 | VGS = 10V, ID = 500 mA | ||||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.75 | %/C | VGS = 10V, ID = 500 mA (Note 1) | ||
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 200 | 330 | mmho | VDS = 25V, ID = 100 mA | |
| Input Capacitance | CISS | 210 | 225 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common-Source Output Capacitance | COSS | 30 | 50 | pF | ||
| Reverse Transfer Capacitance | CRSS | 8 | 15 | pF | ||
| Turn-On Delay Time | td(ON) | 4 | 15 | ns | VDD = 25V, ID = 2A, RGEN = 25 | |
| Rise Time | tr | 15 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | 20 | 25 | ns | ||
| Fall Time | tf | 22 | 27 | ns | ||
| Diode Parameters | ||||||
| Diode Forward Voltage Drop | VSD | 0.9 | V | VGS = 0V, ISD = 200 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 1A | ||
| Thermal Characteristics | ||||||
| Package Thermal Resistance (3-lead TO-252) | JA | 81 | C/W | |||
| Package Thermal Resistance (8-lead SOIC) | JA | 101 | C/W | |||
| Package Thermal Resistance (3-lead TO-92) | JA | 132 | C/W | |||
| Power Dissipation (3-lead TO-252) | PD | 2.5 | W | TA = 25C (Note 2) | ||
| Power Dissipation (8-lead SOIC) | PD | 1.3 | W | TA = 25C (Note 2) | ||
| Power Dissipation (3-lead TO-92) | PD | 0.74 | W | TA = 25C | ||
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