power management solution MIRACLE POWER MPD07N65 N Channel MOSFET with fast switching and low Crss
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Product Description
Product Overview
The MPD07N65 is a high-performance N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with advanced technology, it offers a robust 650V breakdown voltage and a continuous drain current of 7A. Key features include low Crss, fast switching speeds, and 100% avalanche testing, making it ideal for demanding applications such as adaptors, standby power supplies, switching power supplies, and LED power systems. Its optimized design ensures efficient power management and reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPD Series
- Technology: N-Channel Power MOSFET
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 650V, 7A, 1.1 | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Applications | ||||||
| Adaptor | ||||||
| Standby Power | ||||||
| Switching Power Supply | ||||||
| LED Power | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 7 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 4.4 | A | ||
| IDM | Drain Current-Pulsed | 28 | A | |||
| PD | Maximum Power Dissipation | TJ = 25C | 100 | W | ||
| EAS | Single Pulsed Avalanche Energy | 245 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Case | 1.25 | C/W | |||
| RJA | Junction-to-Ambient | 100 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | 4 | V | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 3.5A | 1.1 | 1.4 | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | 1130 | pF | ||
| Coss | Output Capacitance | 93 | pF | |||
| Crss | Reverse Transfer Capacitance | 5.5 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID = 7A, VGS = 10V | 19 | ns | ||
| tr | Turn-On Rise Time | 21 | ns | |||
| td(off) | Turn-Off Delay Time | 42 | ns | |||
| tf | Turn-Off Fall Time | 19 | ns | |||
| Qg | Total Gate Charge | VDS = 520V, ID = 7A, VGS = 10V | 24 | nC | ||
| Qgs | Gate-Source Charge | 5.1 | nC | |||
| Qgd | Gate-Drain Charge | 9.5 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | 7 | A | ||
| ISM | Maximum Pulsed Current | VGS = 0V | 28 | A | ||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 7A | 1.4 | V | ||
| Trr | Body Diode Reverse Recovery Time | di/dt=100A/us, IS=7A, VGS = 0V | 380 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | di/dt=100A/us, IS=7A, VGS = 0V | 1900 | nC | ||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina