MDD Microdiode Semiconductor MDD3400 30V N channel MOSFET optimized for switching power applications

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Product Description

Product Overview

This 30V N-channel MOSFET, the MDD3400, is engineered with a unique device design for low RDS(ON), fast switching, and excellent avalanche characteristics. It features a high-density cell design for extremely low RDS(ON), making it suitable for load switching in portable devices, switching voltage regulators, and DC-DC converters.

Product Attributes

Brand: Microdiode Electronics (Shenzhen)
Model: MDD3400
Package: SOT-23
Marking: MDD3400
Origin: Craftsman-Made Consciention Chip

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V(BR)DSS	VGS=0V, ID=250A	30			V
Gate Threshold Voltage	VGS(TH)	VDS=VGS, ID=250A	0.5		1.2	V
Drain-Source On-State Resistance	RDS(ON)	VGS=4.5V, ID=5A		5	7	m
		VGS=10V, ID=5.8A		3		m
Gate-Source Leakage Current	IGSS	VGS=20V			100	nA
Drain-Source Leakage Current	IDSS	VDS=24V, VGS=0V			1	A
		VGS=-20V			-100	nA
Pulsed Drain Current	IDM	Note 1			23	A
Continuous Drain Current	ID	Note 1			5.8	A
Power Dissipation	PD	Note 2			1.5	W
Thermal Resistance, Junction-Ambient	RJA	Note 2		100		C/W
Junction Temperature	TJ		-50		150	C
Storage Temperature	Tstg		-50		150	C
Input Capacitance	Ciss	VDS=15V, VGS=0V, f=1MHz		635		pF
Output Capacitance	Coss	VDS=15V, VGS=0V, f=1MHz		135		pF
Reverse Transfer Capacitance	Crss	VDS=15V, VGS=0V, f=1MHz		40		pF
Total Gate Charge	Qg	VGS=4.5V, VDS=15V, ID=5A		10.5		nC
Gate Source Charge	Qgs	VGS=4.5V, VDS=15V, ID=5A		1.6		nC
Gate Drain Charge	Qgd	VGS=4.5V, VDS=15V, ID=5A		2.7		nC
Turn on Delay Time	td(on)	VGS=4.5V, VDS=15V, ID=5A, RG=3.3		7.5		ns
Turn on Rise Time	tr	VGS=4.5V, VDS=15V, ID=5A, RG=3.3		18		ns
Turn Off Fall Time	tf	VGS=4.5V, VDS=15V, ID=5A, RG=3.3		36		ns
Turn Off Delay Time	td(off)	VGS=4.5V, VDS=15V, ID=5A, RG=3.3		5		ns
Source Drain Diode Forward Voltage	VSD	IS=3A, VGS=0V		0.82	1.2	V