60V N Channel Enhancement Mode MOSFET MDD Microdiode Semiconductor MDD50N06D with Low On Resistance

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Product Description

Product Overview

The MDD50N06D is a 60V N-Channel Enhancement Mode MOSFET designed for switching applications. It features low on-resistance (RDS(ON) 17m @ VGS=10V, ID=20A), high switching speed, and improved dv/dt capability, making it suitable for demanding power management tasks.

Product Attributes

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Technical Specifications

Parameter	Symbol	Value	Unit	Condition
Drain-Source Voltage	VDS	60	V
Gate-Source Voltage	VGS	20	V
Continuous Drain Current	ID	50	A	TA=25unless otherwise noted
Power Dissipation	PD	62.5	W	TA=25unless otherwise noted
Junction Temperature	TJ	150
Storage Temperature	Tstg	-50 ~+150
Pulsed Drain Current	IDM	200	A	Note 2
Avalanche Energy Single Pulsed	EAS	98	mJ	Note 3
Peak Diode Recovery dv/dt	dv/dt	10	V/ns	Note 4
Thermal Resistance Junction to Ambient	RJA	62	/W
Thermal Resistance Junction to Case	RJC	2	/W
Drain-Source Breakdown Voltage	V(BR)DSS	60	V	VGS=0V, ID=250A
Gate-Source Leakage Current	IGSS	100	nA	VGS=20V, VDS=0V
Drain-Source Leakage Current	IDSS	1	uA	VDS=60V, VGS=0V
Gate Threshold Voltage	VGS(TH)	1.2 - 2.5	V	VDS=VGS, ID=250A
Drain-Source On-State Resistance	RDS(ON)	17	m	VGS=10V, ID=20A
Input Capacitance	Ciss	1889	pF	VDS=30V, VGS=0V, f=1MHz
Output Capacitance	Coss	113	pF	VDS=30V, VGS=0V, f=1MHz
Reverse Transfer Capacitance	Crss	92	pF	VDS=30V, VGS=0V, f=1MHz
Total Gate Charge	Qg	40	nC	VDS=30V, VGS=10V, ID=20A (Note1,2)
Gate Source Charge	Qgs	7.8	nC	VDS=30V, VGS=10V, ID=20A (Note1,2)
Gate Drain Charge	Qgd	8.3	nC	VDS=30V, VGS=10V, ID=20A (Note1,2)
Turn on Delay Time	td(on)	13	ns	VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2)
Turn on Rise Time	tr	25	ns	VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2)
Turn Off Delay Time	td(off)	60	ns	VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2)
Turn Off Fall Time	tf	9	ns	VDS=30V, VGS =10V, ID=20A, RG=3 (Note1,2)
Source drain current(Body Diode)	ISD	50	A
Drain-Source Diode Forward Voltage	VSD	1.2	V	IS=20A, VGS=0V
Body Diode Reverse Recovery Time	trr	29	ns	IS=20A, VGS=0V, dIs/dt=100A/s
Body Diode Reverse Recovery Charge	Qrr	21	nC	IS=20A, VGS=0V, dIs/dt=100A/s