650V 54A N Channel MOSFET MIRACLE POWER MJQ54N65 Suitable for Phase Shift Bridge and Soft Switching Topologies
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MJQ54N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and rated at 650V, 54A with a typical RDS(ON) of 55m at VGS = 10V. This MOSFET is designed for various applications including LLC applications for server and telecom power, phase-shift-bridge (ZVS) in EV charging and solar inverters, and soft switching topologies like boost PFC, half bridge, asymmetric half bridge, series resonance half bridge, and full bridge.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MJQ Series
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC = 25C | 54 | A | |||
| IDM | Drain Current-Pulsed | 162 | A | |||
| PD | Maximum Power Dissipation, TC = 25C | 246 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 1620 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.507 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.5 | - | 4.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 14A | - | 55 | 68 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 1.037 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1.0MHz | - | 4406 | - | pF |
| Coss | Output Capacitance | - | 267 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 2.3 | - | pF | |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 25.8A, RG = 1.7 | - | 12.6 | - | ns |
| tr | Turn-On Rise Time | - | 3.2 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 47.8 | - | ns | |
| tf | Turn-Off Fall Time | - | 6.7 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 25.8A | - | 93.2 | - | nC |
| Qgs | Gate-Source Charge | - | 21.6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 32.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.68 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 25.8A, dIF/dt = 100A/s | - | 454 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 25.8A, di/dt = 100A/s | - | 9.361 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 25.8A, di/dt = 100A/s | - | 40.64 | - | A |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina