1200 Volt 30 Amp Silicon Carbide Diode MICROCHIP MSC030SDA120BCT Ideal for Power Supplies and EV Chargers
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Delivery Time:
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Product Description
Product Overview
The Microsemi MSC030SDA120B is a 1200 V, 30 A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) designed to enhance performance and reduce the total cost of ownership for high-voltage applications. It offers lower forward voltage, minimal leakage current, and no reverse or forward recovery current, making it ideal for higher-reliability systems, reduced heatsink requirements, and improved efficiency. Applications include H/EV powertrain, EV chargers, power supplies, PV inverters, industrial motor drives, smart grid transmission and distribution, and aviation.
Product Attributes
- Brand: Microsemi
- Material: Silicon Carbide (SiC)
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
| Maximum DC reverse voltage | VR | 1200 | V | |
| Maximum peak repetitive reverse voltage | VRRM | V | ||
| Maximum working peak reverse voltage | VRWM | V | ||
| Maximum DC forward current | IF | 65 | A | TC = 25 C |
| Maximum DC forward current | IF | 29 | A | TC = 135 C |
| Maximum DC forward current | IF | 24 | A | TC = 145 C |
| Repetitive peak forward surge current | IFRM | 92 | A | TC = 25 C, t = 8.3 ms, half sine wave |
| Non-repetitive forward surge current | IFSM | 165 | A | TC = 25C, t = 8.3 ms, half sine wave |
| Power dissipation | PTOT | 259 | W | TC = 25 C |
| Power dissipation | PTOT | 112 | W | TC = 110 C |
| Operating junction and storage temperature range | TJ, TSTG | 55 to 175 | C | |
| Lead temperature for 10 seconds | TL | 300 | C | |
| Single pulse avalanche energy | EAS | 100 | mJ | Starting TJ = 25 C, L = 0.22 mH, peak IL = 30 A |
| Junction-to-case thermal resistance | RJC | 0.4 | C/W | |
| Package weight | WT | 5.9 | g | |
| Maximum mounting torque | Torque | 1.1 | N-m | |
| Forward Voltage | VF | 1.5 | V | IF = 30 A, TJ = 25 C |
| Forward Voltage | VF | 2.1 | V | IF = 30 A, TJ = 175 C |
| Reverse leakage current | IRM | 9 | A | VR = 1200 V, TJ = 25 C |
| Reverse leakage current | IRM | 200 | A | VR = 1200 V, TJ = 175 C |
| Total capacitive charge | QC | 130 | nC | VR = 600 V, TJ = 25 C |
| Junction capacitance | CJ | 141 | pF | VR = 400 V, TJ = 25 C, = 1 MHz |
| Junction capacitance | CJ | 105 | pF | VR = 800 V, TJ = 25 C, = 1 MHz |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
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Contact Person
Sellina