N Channel MOSFET MDD Microdiode Semiconductor MDD60N04D designed for motor drives and power supplies
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MOQ:
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Delivery Time:
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Product Description
Product Overview
This N-Channel MOSFET is manufactured using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management applications in telecom and industrial automation, including motor drives, uninterruptible power supplies, and DC/DC & AC/DC (SR) sub-systems. Key features include extremely low reverse recovery charge, a maximum RDS(on) of 7m at VGS = 10V, ID = 30A, and 100% UIS and dVDS tested.
Product Attributes
- Brand: MDD
- Origin: Shenzhen
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 40 | V | ||
| Gate-Source Leakage Current | IGSS | VGS=20V | 100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=40V, VGS=0V | 1 | A | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.2 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A | 7 | m | ||
| Continuous Drain Current | ID | Calculated continuous current based on maximum allowable junction temperature. | 60 | A | ||
| Single Pulsed Avalanche Energy | EAS | TJ=25C, VDD=20V, VGS=10V, L= 0.5mH, Rg= 25, IAS=17A | 114 | mJ | ||
| Thermal Resistance, steady-state | RJA | Junction to Ambient | 72 | C/W | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | Tstg | -55 | +150 | C | ||
| Input Capacitance | Ciss | VGS=0V, VDS=20V, f=1MHz | 165 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=20V, f=1MHz | 155 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=20V, f=1MHz | 10 | pF | ||
| Total Gate Charge | Qg | VGS=0 to 10V, VDS=20V, ID=20A | 48 | nC | ||
| Gate Source Charge | Qgs | VDS=20V, ID=20A | 12 | nC | ||
| Gate Drain Charge | Qgd | VDS=20V, ID=20A | 7.1 | nC | ||
| Turn on Delay Time | td(on) | VGS =10V, VDD=20V, ID=20A, RG=3 | 10 | ns | ||
| Turn on Rise Time | tr | VGS =10V, VDD=20V, ID=20A, RG=3 | 9 | ns | ||
| Turn Off Fall Time | tf | VGS =10V, VDD=20V, ID=20A, RG=3 | 28 | ns | ||
| Turn Off Delay Time | td(off) | VGS =10V, VDD=20V, ID=20A, RG=3 | 40 | ns | ||
| Drain-Source Diode Forward Voltage | VSD | IS=30A, VGS=0V | 0.8 | 1.2 | V | |
| Body Diode Reverse Recovery Time | trr | IF=20A, di/dt=100A/s | 5 | s | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/s | 11 | nC |
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