High cell density DMOS trench P channel transistor MEM2307M3G designed for power management solutions

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Product Description

Product Overview

The MEM2307M3G is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance and is particularly suited for low voltage applications, offering low power dissipation in a very small outline surface mount package (SOT23-3). Key applications include power management, load switching, and battery protection.

Product Attributes

Brand: Microne
Origin: www.microne.com.cn
Package Type: SOT23-3

Technical Specifications

Parameter	Symbol	Ratings	Unit	Test Condition	Min	Type	Max
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	-30	V
Gate-Source Voltage	VGSS	±20	V
Drain Current	ID	-4.1 (TA=25) / -3.5 (TA=70)	A
Pulsed Drain Current	IDM	-20	A	1,2
Total Power Dissipation	Pd	1.4 (TA=25) / 1 (TA=70)	W
Operating Temperature Range	TOpr	150
Storage Temperature Range	Tstg	-55/150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient	RJA	65 (t≤10s) / 85 (Steady-State)	/W				90 (t≤10s) / 125 (Steady-State)
Thermal Resistance, Junction-to-Lead	RJL	43 (Steady-State)	/W				60 (Steady-State)
Electrical Characteristics
Drain-Source Breakdown Voltage	V(BR)DSS	-30	V	VGS=0V, ID=-250uA	-30
Gate Threshold Voltage	VGS(th)	-1 (VDS=VGS, ID=-250uA) / -1.3 (VDS=VGS, ID=-250uA)	V		-1	-1.3	-2
Gate-Body Leakage	IGSS	±100	nA	VDS=0V, VGS=±20V			±100
Zero Gate Voltage Drain Current	IDSS	-1000	nA	VDS=-24V, VGS=0V			-1000
Static Drain-Source On-Resistance	RDS(ON)1	88	m	VGS=-10V,ID=-4.1A			88
Static Drain-Source On-Resistance	RDS(ON)2	108	m	VGS=-4.5V,ID=-3A			108
Forward Transconductance	gFS	5.5	S	VDS = –5 V, ID = –4A	5.5		8.2
Maximum Body-Diode Continuous Current	Is	-2.2	A				-2.2
Source-drain (diode forward) voltage	VSD	0.77	V	VGS=0V,ID=-1A	0.77		-1.0
Dynamic Characteristics
Input Capacitance	Ciss	700	pF	VGS=0V, VDS=-15V, f=1MHz		700	840
Output Capacitance	Coss	120	pF	VGS=0V, VDS=-15V, f=1MHz		120
Reverse Transfer Capacitance	Crss	75	pF	VGS=0V, VDS=-15V, f=1MHz		75
Gate resistance	Rg	10		VGS=0V, VDS=0V, f=1MHz		10	15
Switching Characteristics
Turn-On Delay Time	td(on)	8.6	ns	VGS=-10V,VDS=-15V, RL=3.6,RGEN=6		8.6
Rise Time	tr	5	ns	VGS=-10V,VDS=-15V, RL=3.6,RGEN=6		5
Turn-Off Delay Time	td(off)	28.2	ns	VGS=-10V,VDS=-15V, RL=3.6,RGEN=6		28.2
Fall-Time	tf	13.5	ns	VGS=-10V,VDS=-15V, RL=3.6,RGEN=6		13.5
Total Gate Charge	Qg	14.3	nc	VDS = -15 V, VGS = -4.5 V, ID = -4A		14.3
Gate-Source Charge	Qgs	3.1	nc	VDS = -15 V, VGS = -4.5 V, ID = -4A		3.1
Gate-Drain Charge	Qg d	3	nc	VDS = -15 V, VGS = -4.5 V, ID = -4A		3