Mini Circuits SAV 541 E PHEMT transistor optimized for GSM WCDMA WiMax WLAN and ISM wireless systems
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Delivery Time:
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Product Description
Product Overview
The SAV-541+ is an ultra-low noise, medium current E-PHEMT transistor designed for high IP3 performance and single positive supply voltage operation. It excels in demanding base station applications, offering outstanding noise figures, particularly below 2.5 GHz. This device can be used as a replacement for Avago ATF-54143 and is suitable for applications in Cellular, ISM, GSM, WCDMA, WiMax, WLAN, UNII, and HIPERLAN. Mini-Circuits also offers these units assembled into complete 50 in/out modules.
Product Attributes
- Brand: Mini-Circuits
- Technology: E-PHEMT*
- RoHS Compliance: +Suffix indicates RoHS Compliance
- Package Style: MMM1362 (SOT-343 / SC-70)
- Lead Finish: Matte Tin
- ESD Rating: Human Body Model (HBM): Class 1A (250 V to < 500 V); Machine Model (MM): Class M1 (40 V)
- MSL Rating: MSL1
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| DC Specifications | |||||
| VGS Operational Gate Voltage | VDS=3V, IDS=60 mA | 0.37 | 0.48 | 0.69 | V |
| VTH Threshold Voltage | VDS=3V, IDS=4 mA | 0.18 | 0.26 | 0.38 | V |
| IDSS Saturated Drain Current | VDS=3V, VGS=0 V | 1.0 | 5.0 | µA | |
| GM Transconductance | VDS=3V, Gm=Δ IDS/ΔVGS ΔVGS=VGS1-VGS2 VGS1=VGS at IDS=60 mA VGS2=VGS1+0.05V | 392 | mS | ||
| IGSS Gate leakage Current | VGD=VGS=-3V | 200 | µA | ||
| RF Specifications, Z0=50 Ohms | |||||
| NF Noise Figure | VDS=3V, IDS=60 mA, f=0.9 GHz | 0.4 | dB | ||
| VDS=3V, IDS=60 mA, f=2.0 GHz | 0.5 | 0.9 | dB | ||
| VDS=3V, IDS=60 mA, f=3.9 GHz | 1.0 | dB | |||
| VDS=3V, IDS=60 mA, f=5.8 GHz | 1.9 | dB | |||
| Gain | VDS=3V, IDS=60 mA, f=0.9 GHz | 23.2 | dB | ||
| VDS=3V, IDS=60 mA, f=2.0 GHz | 15.0 | 17.6 | 18.5 | dB | |
| VDS=3V, IDS=60 mA, f=3.9 GHz | 12.5 | dB | |||
| VDS=3V, IDS=60 mA, f=5.8 GHz | 8.7 | dB | |||
| OIP3 Output IP3 | VDS=3V, IDS=60 mA, f=0.9 GHz | 32.6 | dBm | ||
| VDS=3V, IDS=60 mA, f=2.0 GHz | 30.0 | 33.1 | dBm | ||
| VDS=3V, IDS=60 mA, f=3.9 GHz | 33.0 | dBm | |||
| VDS=3V, IDS=60 mA, f=5.8 GHz | 31.0 | dBm | |||
| P1dB Power output at 1 dB Compression | VDS=3V, IDS=60 mA, f=0.9 GHz | 19.1 | dBm | ||
| VDS=3V, IDS=60 mA, f=2.0 GHz | 19.2 | dBm | |||
| VDS=3V, IDS=60 mA, f=3.9 GHz | 19.0 | dBm | |||
| VDS=3V, IDS=60 mA, f=5.8 GHz | 18.2 | dBm | |||
| Maximum Ratings | |||||
| VDS Drain-Source Voltage | 5 | V | |||
| VGS Gate-Source Voltage | -5 | 0.7 | V | ||
| VGD Gate-Drain Voltage | -5 | 0.7 | V | ||
| IDS Drain Current | 120 | mA | |||
| IGS Gate Current | 2 | mA | |||
| PDISS Total Dissipated Power | 360 | mW | |||
| PIN RF Input Power | 17 | dBm | |||
| TCH Channel Temperature | 150 | °C | |||
| TOP Operating Temperature | -40 | 85 | °C | ||
| TSTD Storage Temperature | -65 | 150 | °C | ||
| ΘJC Thermal Resistance | 160 | °C/W | |||
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina