High Gain Amplification Transistor Minos TIP122 NPN Silicon Darlington with Integrated Damping Diode

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Product Description

Product Overview

This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring high amplification factors.

Product Attributes

Brand: Shenzhen Minos ()
Type: NPN Silicon Transistor
Construction: Darlington
Integrated Component: Damping Diode
Origin: Shenzhen, China

Technical Specifications

Parameter	Symbol	Min	Typical	Max	Unit	Test Conditions
Absolute Maximum Ratings (Ta=25)
Storage Temperature	Tstg	-65		150
Junction Temperature	Tj			150
Collector Power Dissipation (Tc=25)	PC			65	W
Collector Power Dissipation (TA=25)	PC			2	W
Collector-Base Voltage	VCBO			100	V
Collector-Emitter Voltage	VCEO			100	V
Emitter-Base Voltage	VEBO			5	V
Collector Current	IC			5	A
Collector Current (Pulse)	ICP			8	A
Base Current	IB			120	mA
Electrical Characteristics (Ta=25)
Collector-Base Breakdown Voltage	BVCBO	100			V	IC=1mA, IE=0
Collector-Emitter Breakdown Voltage	BVCEO	100			V	IC=5mA, IB=0
Collector-Emitter Cutoff Current	ICEO		0.5		mA	VCE=50V, IB=0
Collector-Base Cutoff Current	ICBO		0.2		mA	VCB=100V, IE=0
Emitter-Base Cutoff Current	IEBO		2.0		mA	VEB=5V, IC=0
DC Current Gain	HFE	1000				VCE=3V, IC=0.5A
Collector-Emitter Saturation Voltage	VCE(sat1)		2.0		V	IC=3A, IB=12mA
Collector-Emitter Saturation Voltage	VCE(sat2)		4.0		V	IC=5A, IB=20mA
Base-Emitter On Voltage	VBE(on)		2.5		V	VCE=3V, IC=3A
Common Base Output Capacitance	Cob		200		pF	VCB=10V, IE=0, f=0.1MHz