Integrated Damping Diode NPN Silicon Transistor Minos TIP102 for High Gain Current Amplification Applications

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Product Description

Product Overview

This NPN Silicon Transistor is a Darlington transistor with an integrated damping diode, designed for high-gain circuits. It is suitable for applications requiring significant current amplification.

Product Attributes

Brand: MNS
Type: NPN Silicon Transistor
Package: TO-220

Technical Specifications

Parameter Symbol	Symbol	Description	Min	Typical	Max	Unit	Test Conditions
Storage Temperature	Tstg		-65		150		Ta=25
Junction Temperature	Tj				150
Collector Dissipation Power	PC	(Tc=25)			65	W
Collector Dissipation Power	PC	(TA=25)			2	W
Collector-Base Voltage	VCBO				100	V	Ta=25
Collector-Emitter Voltage	VCEO				100	V	Ta=25
Emitter-Base Voltage	VEBO				5	V	Ta=25
Collector Current	IC				5	A	Ta=25
Collector Current (Pulse)	ICP				8	A	Ta=25
Base Current	IB				120	mA	Ta=25
Collector-Base Breakdown Voltage	BVCBO		100			V	IC=1mA, IE=0
Collector-Emitter Breakdown Voltage	BVCEO		100			V	IC=5mA, IB=0
Collector-Emitter Cutoff Current	ICEO				0.5	mA	VCE=50V, IB=0
Collector-Base Cutoff Current	ICBO				0.2	mA	VCB=100V, IE=0
Emitter-Base Cutoff Current	IEBO				2.0	mA	VEB=5V, IC=0
DC Current Gain	HFE		1000				VCE=3V, IC=0.5A
Collector-Emitter Saturation Voltage	VCE(sat1)				2.0	V	IC=3A, IB=12mA
Collector-Emitter Saturation Voltage	VCE(sat2)			4.0		V	IC=5A, IB=20mA
Base-Emitter On Voltage	VBE(on)				2.5	V	VCE=3V, IC=3A
Common-Base Output Capacitance	Cob				200	pF	VCB=10V, IE=0, f=0.1MHz