MDD Microdiode Semiconductor MDD12N60F 600V N Channel MOSFET RoHS compliant for environmental safety

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Product Description

Product Overview

The MDD12N60F is a 600V N-Channel Enhancement Mode MOSFET designed for high-efficiency power applications. It features low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched-mode power supplies, and LED drivers.

Product Attributes

Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Value	Unit	Condition
Absolute Maximum Ratings	VDS	600	V
	VGS	±30	V
	ID	12	A	Tc=25°C
	PD	42	W	TO-220F
	TJ	150	°C
	Tstg	-55 ~150	°C
	IDM	48	A	Pulsed Drain Current(Note 1)
Thermal Characteristics	RθJC	2.98	°C/W	TO-220F
	RθJA	110	°C/W	TO-220F
	TJ	150	°C	Junction Temperature
Dynamic Electrical Characteristics	Ciss	1960	pF	VDS=25V, VGS=0V, f=1MHz
	Coss	163	pF	VDS=25V, VGS=0V, f=1MHz
	Crss	7.2	pF	VDS=25V, VGS=0V, f=1MHz
Gate Charge	Qg	40.8	nC	VDS=480V, VGS=10V, ID=12A (Note1,2)
	Qgs	11.0	nC	VDS=480V, VGS=10V, ID=12A (Note1,2)
	Qgd	15.6	nC	VDS=480V, VGS=10V, ID=12A (Note1,2)
Switching Characteristics	td(on)	14.3	ns	VDS=300V, ID=12A, RG=10Ω (Note1,2)
	tr	37.6	ns	VDS=300V, ID=12A, RG=10Ω (Note1,2)
	td(off)	65.4	ns	VDS=300V, ID=12A, RG=10Ω (Note1,2)
	tf	14.2	ns	VDS=300V, ID=12A, RG=10Ω (Note1,2)
Source Drain Diode Characteristics	IS	12	A	Continuous diode forward current
	VSD	1.5	V	IS=12A, VGS=0V
	IS,pulse	48	A	Continuous diode forward current
Electrical Characteristics	V(BR)DSS	600	V	VGS=0V, ID=250µA
	IGSS	100	nA	VGS=30V, VDS=0V
	IDSS	1	µA	VDS=600V, VGS=0V
	VGS(TH)	2.0 - 4.0	V	VDS=VGS, ID=250µA
	RDS(ON)	0.75	Ω	VGS=10V, ID=6A
	RDS(ON)	0.53	Ω	VGS=10V, ID=12A