vertical dmos fet MICROCHIP TN2425N8 G with high input impedance and protection against thermal issues
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Product Description
Product Overview
The TN2425 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It utilizes a vertical DMOS structure and a silicon-gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general-purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: 3-lead SOT-89 (TO-243AA)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-to-Source Breakdown Voltage | BVDSS | 250 | - | - | V | VGS = 0V, ID = 250 A |
| Gate Threshold Voltage | VGS(th) | 0.8 | - | 2.5 | V | VGS = VDS, ID = 1 mA |
| Gate Body Leakage Current | IGSS | - | - | 100 | nA | VGS = 20V, VDS = 0V |
| Zero-Gate Voltage Drain Current | IDSS | - | - | 10 | A | VGS = 0V, VDS = Maximum rating |
| On-State Drain Current | ID(ON) | 0.8 | - | - | A | VGS = 4.5V, VDS = 25V |
| On-State Drain Current | ID(ON) | 1.5 | - | - | A | VGS = 10V, VDS = 25V |
| Static Drain-to-Source On-State Resistance | RDS(ON) | - | - | 6 | VGS = 3V, ID = 150 mA | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | - | - | 5 | VGS = 4.5V, ID = 250 mA | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | - | - | 3.5 | VGS = 10V, ID = 500 mA | |
| Forward Transconductance | GFS | 500 | - | - | mmho | VDS = 25V, ID = 250 mA |
| Input Capacitance | CISS | - | 105 | 200 | pF | VGS = 0V, VDS = 25V, f = 1 MHz |
| Common-Source Output Capacitance | COSS | - | 25 | 100 | pF | VGS = 0V, VDS = 25V, f = 1 MHz |
| Reverse Transfer Capacitance | CRSS | - | 7 | 40 | pF | VGS = 0V, VDS = 25V, f = 1 MHz |
| Turn-On Delay Time | td(ON) | - | 5 | 15 | ns | VDD = 25V, ID = 500 mA, RGEN = 25 |
| Rise Time | tr | - | 10 | 25 | ns | VDD = 25V, ID = 500 mA, RGEN = 25 |
| Turn-Off Delay Time | td(OFF) | - | 25 | 35 | ns | VDD = 25V, ID = 500 mA, RGEN = 25 |
| Fall Time | tf | - | 5 | 15 | ns | VDD = 25V, ID = 500 mA, RGEN = 25 |
| Diode Forward Voltage Drop | VSD | - | - | 1.5 | V | VGS = 0V, ISD = 500 mA |
| Reverse Recovery Time | trr | - | 300 | - | ns | VGS = 0V, ISD = 500 mA |
| Operating Ambient Temperature | TA | -55 | - | +150 | C | - |
| Storage Temperature | TS | -55 | - | +150 | C | - |
| Package Thermal Resistance (3-lead SOT-89) | JA | - | 73 | - | C/W | - |
| Continuous Drain Current (3-lead SOT-89) | ID (continuous) | - | 480 | - | mA | Limited by maximum rated TJ |
| Pulsed Drain Current (3-lead SOT-89) | ID (Pulsed) | - | 1.9 | - | A | - |
| Power Dissipation at TA = 25C (3-lead SOT-89) | PD | - | 1.6 | - | W | Mounted on an FR5 Board, 25 mm x 25 mm x 1.57 mm |
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