Power Amplifier Minos 2SC4793 NPN Triple Diffusion Type Suitable for High Voltage Electronic Circuits
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The Minos Silicon NPN Triple Diffusion Type Power Amplifier is designed for high-voltage applications. It is complementary to the 2SA1837 and features a high collector voltage of 230V (min). This power amplifier is suitable for various electronic circuits requiring robust performance and reliability.
Product Attributes
- Brand: Minos Silicon
- Type: NPN Triple Diffusion Type Power Amplifier
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Rating | Unit | Test Condition | Min | Typ | Max |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||||
| VCBO | Collector-base voltage | 230 | V | ||||
| VCEO | Collector-emitter voltage | 230 | V | ||||
| VEBO | Emitter-base voltage | 5 | V | ||||
| IC | Collector current | 1 | A | ||||
| IB | Base current | 0.2 | A | ||||
| PC | Collector power dissipation (Tc=25) | 50 | W | ||||
| Tj | Junction temperature | 150 | |||||
| TSTG | Storage temperature range | -55 | 150 | ||||
| Thermal Characteristics | |||||||
| RJC | Junction-to-Case | /W | 3.0 | ||||
| Electrical Characteristics | |||||||
| ICBO | Collector-Base Cut-off Current | uA | VCB=230V, IE=0 | 1.0 | |||
| IEBO | Emitter-Base Cut-off Current | uA | VEB=5V, IC=0 | 1.0 | |||
| VCEO | Collector-Emitter Breakdown Voltage | 230 | V | IC=1mA | |||
| hFE | DC current gain | IC=0.1A; VCE=5V | 100 | 300 | |||
| VCEsat | Collector-emitter saturation voltage | V | IC=0.5A; IB=0.05A | 0.5 | |||
| VBEsat | Base-Emitter Saturation Voltage | V | IC=0.5A,IB=0.05A | 1.4 | |||
| VBE | Base-emitter voltage | V | VCE=5V;IC=0.5A | 1.5 | |||
| fT | Transition frequency | 40 | MHz | VCE=10V;IC=100mA | |||
Package Information
TO-220F PACKAGE
| Symbol | Dimensions (millimeters) | Min | Max |
|---|---|---|---|
| A | 4.35 | 4.75 | |
| A1 | 2.30 | 2.70 | |
| A2 | 0.40 | 0.80 | |
| A3 | 2.1 | 2.50 | |
| b | 0.60 | 1.00 | |
| b1 | 1.00 | 1.40 | |
| c | 0.30 | 0.70 | |
| e | 2.30 | 2.70 | |
| E | 9.80 | 10.2 | |
| E1 | 6.30 | 6.70 | |
| H | 15.6 | 16.0 | |
| H1 | 8.80 | 9.20 | |
| H2 | 12.9 | 13.5 | |
| H3 | 3.10 | 3.50 | |
| G | 3.10 | 3.50 | |
| P | 3.10 | 3.50 |
Important Notes:
- Exceeding the maximum ratings of the device may cause damage, including permanent failure, which can affect the dependability of the machine. Please adhere to the absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to the torsional moment and the smoothness of the heat sink.
- MOSFETs are sensitive to static electricity and require protection during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina