Low resistance MOSFET Megain MGC068N10N with fast switching speeds and 90A continuous drain current
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Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The MGC068N10N is an N-channel MOSFET featuring Advanced Trench MOS Technology, offering high performance for high-frequency switching applications. It boasts 100V drain-source voltage, 90A continuous drain current, and low on-state resistance (typically 6.8 m at VGS=10V). This device is 100% EAS guaranteed, provides fast switching speeds, and is available as a Green Device. Its applications include high-frequency switching, synchronous rectification, and DC/DC converters.
Product Attributes
- Brand: MEGA
- Product Code: MGC068N10N
- Technology: Advanced Trench MOS Technology
- Certifications: Green Device Available
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | - | - | 100 | V |
| VGS | Gate-Source Voltage | - | - | 20 | V |
| ID | Drain Current Continuous (TC=25) | - | - | 90 | A |
| ID | Drain Current Continuous (TC=70) | - | - | 72 | A |
| IDM | Pulsed Drain Current | - | - | 360 | A |
| EAS | Single Pulse Avalanche Energy | - | - | 107 | mJ |
| IAS | Avalanche Current | - | - | 35.2 | A |
| PD | Total Power Dissipation (TC=25C) | - | - | 104 | W |
| TSTG | Storage Temperature Range | -55 | - | 150 | |
| TJ | Operating Junction Temperature Range | -55 | - | 150 | |
| RJA | Thermal Resistance Junction-Ambient | - | - | 70 | /W |
| RJC | Thermal Resistance Junction to Case | - | 1.0 | 1.4 | /W |
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 100 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance (VGS=10V, ID=13.5A) | - | 6.8 | 8 | m |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID=250uA) | 2 | - | 3.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=80V, VGS=0V) | - | - | 1 | uA |
| IDSS | Drain-Source Leakage Current (VDS=80V, VGS=0V, TJ=55) | - | - | 5 | uA |
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | - | - | 100 | nA |
| gfs | Forward Transconductance (VDS=10V, ID=20A) | - | 44 | - | S |
| Ciss | Input Capacitance (VGS=0V, VDS=50V, F=1MHz) | - | 2176 | - | pF |
| Coss | Output Capacitance | - | 294 | - | pF |
| Crss | Reverse Transfer Capacitance | - | 7 | - | pF |
| Td(ON) | Turn-on Delay Time (VGS=10V,VDD=50V, ID=13.5A,RG=3) | - | 11.6 | - | nS |
| Tr | Turn-on Rise Time | - | 28.7 | - | nS |
| Td(OFF) | Turn-off Delay Time | - | 26.4 | - | nS |
| Tf | Turn-off Fall Time | - | 35.6 | - | nS |
| Qg | Total Gate Charge (10V) (VGS=10V,VDS=50V, ID=13.5A) | - | 33.1 | - | nC |
| Qgs | Gate-Source Charge | - | 10 | - | nC |
| Qgd | Gate-Drain Charge | - | 5.1 | - | nC |
| IS | Continuous Source Current (VG=VD=0V,Force Current) | - | - | 90 | A |
| VSD | Diode Forward Voltage (IS=20A, VGS=0V) | - | - | 1.1 | V |
| trr | Reverse Recovery Time (ID=13.5A, VDS=50V, di/dt=100A/us) | - | 45 | - | nS |
| Qrr | Reverse Recovery Charge | - | 49.3 | - | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina