Ultrafast soft recovery diode Minos 80F40 optimized for high frequency power conditioning systems

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Product Description

Product Overview

These ultrafast soft recovery diodes are optimized for high-frequency power conditioning systems, offering reduced losses and EMI/RFI. Their soft recovery behavior acts as a natural snubber in most applications, making them ideal for HF welding power converters and other systems where switching losses are not a primary concern.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen Minos (implied from contact information)

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
Repetitive peak reverse voltage	VRRM				400	V
Continuous forward current	IF(AV)	Tc =110C			80	A
Single pulse forward current	IFSM	Tc =25C			600
Maximum repetitive forward current	IFRM	Square wave, 20kHZ			160
Operating junction temperature	Tj				175	C
Storage temperature	Tstg		-55		+175	C
Electrical Characteristics
Breakdown voltage / Blocking voltage	VBR, VR	IR=100A			400	V
Forward voltage (Per Diode)	VF	IF=40A		1.20	1.60	V
Forward voltage (Per Diode)	VF	IF=40A, Tj=125C		1.10	1.40	V
Reverse leakage current (Per Diode)	IR	VR= VRRM			30	A
Reverse leakage current (Per Diode)	IR	Tj=150C, VR=400V			300	A
Reverse recovery time (Per Diode)	trr	IF=0.5A, IR=1A, IRR=0.25A		40	55	ns
Reverse recovery time (Per Diode)	trr	IF=1A,VR=30V, di/dt =200A/us		26	40	ns
Thermal Characteristics
Junction-to-Case	RJC			0.8		/W

Package Dimensions (TO-3P)

Symbol	Dimensions (mm)
Min.	Max.
A	4.60	5.00
A1	1.30	1.70
A2	2.20	2.60
b	0.80	1.20
b1	2.90	3.30
b2	1.90	2.30
c	0.40	0.80
e	5.25	5.65
E	15.3	15.7
E1	13.2	13.6
E2	13.1	13.5
E3	9.10	9.50
H	19.7	20.1
H1	19.1	20.1
H2	18.3	18.7
H3	2.80	3.20
G	4.80	5.20
P	3.00	3.40