Schottky diode Minos MBR60200PT 200 volt 60 amp continuous forward current for power supply circuits

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

SBD Schottky Barrier Diode, 200V, 2x30A. Optimized for low forward voltage and low reverse leakage current, these diodes are suitable for high-frequency switched-mode power supplies. Key features include high ESD capability, 150 operating junction temperature, high-frequency operation, low IR value, and high surge capacity.

Product Attributes

Brand: SBD
Origin: Shenzhen Minos (implied by contact information)
Certifications: None explicitly mentioned
Material: Not specified
Color: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Values	Units
Absolute Maximum Ratings
Repetitive peak reverse voltage	VRRM		200	V
Continuous forward current	IF(AV)	TA=110	60	A
Single pulse forward current	IFSM	TA=25	480	A
Maximum repetitive forward current	IFRM	Square wave, 20kHZ	150	A
Operating junction temperature	Tj		150
Storage temperatures	Tstg		-55 to +175
Electrical Characteristics
Breakdown voltage / Blocking voltage	VBR	VR, IR=100A	200	V
Forward voltage	VF	IF=20.0A	0.82 - 0.85	V
Forward voltage	VF	IF=30.0A	0.85 - 0.95	V
Forward voltage (Tj=125)	VF	IF=20.0A	0.70 - 0.80	V
Forward voltage (Tj=125)	VF	IF=30.0A	0.75 - 0.85	V
Reverse leakage current	IR	VR=VRRM	10	A
Reverse leakage current (Tj=125)	IR	VR=200V	5000	A
Thermal Characteristics
Junction-to-Case thermal resistance	RthJC		0.80	/W

Package Description (TO-247)

Items	MIN	MAX	Units
A	4.90	5.16	mm
A1	2.27	2.53	mm
A2	1.85	2.11	mm
B	1.07	1.33	mm
B1	1.90	2.41	mm
B2	1.75	2.15	mm
B3	2.87	3.38	mm
B4	2.87	3.13	mm
C	0.55	0.68	mm
D	20.82	21.10	mm
D1	16.25	17.65	mm
D2	1.05	1.35	mm
E	15.70	16.03	mm
E1	13.10	14.15	mm
E2	3.68	5.10	mm
E3	1.68	2.60	mm
e	5.44		mm
L	19.80	20.31	mm
L1	4.17	4.47	mm
P	3.50	3.70	mm
Q	5.49	6.00	mm
S	6.04	6.30	mm