High Frequency Power Supply Diode Minos MBRF10200CT with Low Reverse Leakage and High Surge Capacity

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Product Description

Product Overview

The MBRF10200CT is a SBD Schottky Barrier Diode designed for high-frequency switched mode power supplies. It is optimized for low forward voltage and low reverse leakage current, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity. This diode is ideal for applications requiring efficient and reliable power conversion.

Product Attributes

Brand: MNS (derived from www.mns-kx.com)
Origin: Shenzhen, China (derived from contact information)

Technical Specifications

Parameter	Symbol	Test Conditions	Values	Units
Repetitive peak reverse voltage	VRRM		200	V
Repetitive peak reverse voltage	VRRM		200
Continuous forward current	IF(AV)	TA=110	10	A
Continuous forward current	IF(AV)			A
Single pulse forward current	IFSM	TA=25	150	A
Maximum repetitive forward current	IFRM	Square wave, 20kHZ	25	A
Operating junction temperature	Tj		150
Storage temperatures	Tstg		-55 to +175
Breakdown voltage / Blocking voltage	VBR	VR = IR=100A	200	V
Forward voltage	VF	IF=3.0A	0.79 - 0.85	V
		IF=5.0A	0.86 - 0.93
		IF=3.0A, Tj =125	0.69 - 0.80
		IF=5.0A, Tj =125	0.74 - 0.85
Reverse leakage current	IR	VR= VRRM	10	A
Reverse leakage current	IR	Tj=125, VR=200V	2000	A
Junction-to-Case Thermal Resistance	RthJC		4.2	/W

Package Description (TO-220F)

Symbol	MIN	MAX
A	4.35	4.75
A1	2.30	2.70
A2	0.40	0.80
A3	2.10	2.50
b	0.60	1.00
b1	1.00	1.40
c	0.30	0.70
e	2.30	2.70
E	9.80	10.2
E1	6.30	6.70
H	15.6	16.0
H1	8.80	9.20
H2	12.9	13.5
H3	3.10	3.50
G	3.10	3.50
p	3.10	3.50