Power Schottky Barrier Rectifier Minos MBRF30100CT for Low Voltage High Frequency Inverter Circuits

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Product Description

Product Overview

This is a power Schottky barrier rectifier designed for low-voltage, high-frequency inverter circuits, freewheeling circuits, and protection circuits. It offers efficient rectification and is suitable for various electronic applications.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen, China

Technical Specifications

Parameter	Symbol	Description	Min	Typical	Max	Unit	Test Conditions
Storage Temperature	Tstg	Storage Temperature	-65		175
Junction Temperature	Tj	Junction Temperature	-65		150
Maximum Repetitive Peak Reverse Voltage	VRRM	Maximum Repetitive Peak Reverse Voltage			100	V
Peak Working Reverse Voltage	VRWM	Peak Working Reverse Voltage			100	V
Reverse Working Voltage (RMS)	VR(RMS)	Reverse Working Voltage (RMS)			70	V
Maximum DC Reverse Voltage	VR	Maximum DC Reverse Voltage			100	V
Maximum Average Forward Current (Tc=125)	IF(AV)	Maximum Average Forward Current (Tc=125)			15	A	Single Device
Maximum Average Forward Current (Tc=125)	IF(AV)	Maximum Average Forward Current (Tc=125)			30	A	Whole Device
Forward Peak Surge Current (Single Device, 60HZ)	IFSM	Forward Peak Surge Current (Single Device, 60HZ)			200	A
Reverse Transient Current	IR	Reverse Transient Current		0.5		mA	VR=VRRM, TC = 25 C
Reverse Transient Current	IR	Reverse Transient Current				mA	TC= 125 C
Forward Transient Peak Voltage Drop	VF	Forward Transient Peak Voltage Drop		0.70	0.84	V	IF= 15 A, TC= 25 C (Note 1)
Forward Transient Peak Voltage Drop	VF	Forward Transient Peak Voltage Drop		0.70	0.94	V	IF= 15 A, TC= 125 C
Forward Transient Peak Voltage Drop	VF	Forward Transient Peak Voltage Drop		0.82	0.94	V	IF= 30 A, TC = 25 C
Forward Transient Peak Voltage Drop	VF	Forward Transient Peak Voltage Drop		0.82	0.94	V	IF= 30 A, TC = 125 C
Thermal Resistance (Junction to Case per pin)	Rth(j-c)	Thermal Resistance (Junction to Case per pin)			4.0	/W
Junction Capacitance	Cj	Junction Capacitance (Note 2)			1000	pF	f=1MHz, VR=4V
Rate of Voltage Slew	dV/dt	Rate of Voltage Slew			10000	V/s
Insulation Voltage (Heat sink to surface, t=3 sec)	VISO	Insulation Voltage (Heat sink to surface, t=3 sec)			2000	V