Nexperia PMBT3906 215 PNP Transistor in SOT23 Package Ideal for Switching and Amplification Circuits
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Product Description
Product Overview
The Nexperia PMBT3906 is a PNP switching transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for general amplification and switching applications, this transistor offers a collector-emitter voltage (VCEO) of -40 V and a collector current (IC) capability of -200 mA. Its NPN complement is the PMBT3904.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Transistor Type: PNP Switching Transistor
- Complementary NPN Transistor: PMBT3904
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -40 | V |
| IC | Collector current | - | - | - | -200 | mA |
| VCBO | Collector-base voltage | open emitter | - | - | -40 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -6 | V |
| ICM | Peak collector current | - | - | - | -200 | mA |
| IBM | Peak base current | - | - | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air | - | - | 500 | K/W |
| ICBO | Collector-base cut-off current | VCB = -30 V; IE = 0 A | - | - | -50 | nA |
| IEBO | Emitter-base cut-off current | VEB = -6 V; IC = 0 A | - | - | -50 | nA |
| hFE | DC current gain | VCE = -1 V; IC = -0.1 mA | 60 | - | - | - |
| VCE = -1 V; IC = -1 mA | 80 | - | - | - | ||
| VCE = -1 V; IC = -10 mA | 100 | - | 300 | - | ||
| VCE = -1 V; IC = -50 mA | 60 | - | - | - | ||
| VCE = -1 V; IC = -100 mA | 30 | - | - | - | ||
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -1 mA | - | - | -250 | mV |
| IC = -50 mA; IB = -5 mA | - | - | -400 | mV | ||
| VBEsat | Base-emitter saturation voltage | IC = -10 mA; IB = -1 mA | - | - | -850 | mV |
| IC = -50 mA; IB = -5 mA | - | - | -950 | mV | ||
| td | Delay time | ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA | - | - | 35 | ns |
| tr | Rise time | - | - | - | 35 | ns |
| ton | Turn-on time | - | - | - | 70 | ns |
| ts | Storage time | - | - | - | 225 | ns |
| tf | Fall time | - | - | - | 75 | ns |
| toff | Turn-off time | - | - | - | 300 | ns |
| fT | Transition frequency | VCE = -20 V; IC = -10 mA; f = 100 MHz | 250 | - | - | MHz |
| Cc | Collector capacitance | VCB = -5 V; IE = ie = 0 A; f = 1 MHz | - | - | 4.5 | pF |
| Ce | Emitter capacitance | VEB = -500 mV; IC = ic = 0 A; f = 1 MHz | - | - | 10 | pF |
| NF | Noise figure | IC = -100 A; VCE = -5 V; RS = 1 k; f = 10 Hz to 15.7 kHz | - | - | 4 | dB |
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