Plastic Package NPN Medium Power Transistor Nexperia BC868 115 Series Surface Mount SOT89 SMD Devices
Nexperia BCP68; BC868; BC68PA NPN Medium Power Transistors
Product Overview
The Nexperia BCP68, BC868, and BC68PA series are NPN medium power transistors designed for surface-mounted devices (SMD) in plastic packages. These transistors offer high current capabilities, multiple current gain selections, and high power dissipation. Key features include an exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) and a leadless, very small SMD plastic package with medium power capability (SOT1061). They are AEC-Q101 qualified, making them suitable for demanding applications such as linear voltage regulators, power management, low-side switches, MOSFET drivers, battery-driven devices, and amplifiers.
Product Attributes
- Brand: Nexperia
- Type: NPN Medium Power Transistor
- Qualification: AEC-Q101 Qualified
Technical Specifications
| Type Number | Package | Description | PNP Complement | Max Collector Current (IC) | Max Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|
| BCP68 | SOT223 (SC-73) | Plastic surface-mounted package with increased heatsink; 4 leads | BCP69 | 2 A | 20 V |
| BC868 | SOT89 (SC-62 / TO-243) | Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads | BC869 | 2 A | 20 V |
| BC68PA | SOT1061 (HUSON3) | Thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm | BC69PA | 2 A | 20 V |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 20 | V |
| IC | Collector current | - | - | - | 2 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 3 | A |
| hFE | DC current gain | VCE = 1 V; IC = 500 mA | 85 | - | 375 | - |
| hFE | DC current gain (selection) | VCE = 1 V; IC = 500 mA | 160 | - | 375 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 32 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 5 | V |
| IB | Base current | - | - | - | 0.4 | A |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | 0.4 | A |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | BCP68 [1] | - | - | 192 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC868 [1] | - | - | 250 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient | BC68PA [1] | - | - | 298 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BCP68 | - | - | 16 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BC868 | - | - | 16 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | BC68PA | - | - | 20 | K/W |
| ICBO | Collector-base cut-off current | VCB = 25 V; IE = 0 A | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 25 V; IE = 0 A; Tj = 150 C | - | - | 10 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 100 | nA |
| hFE | DC current gain | VCE = 10 V; IC = 5 mA | 50 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 500 mA | 85 | - | 375 | - |
| hFE | DC current gain | VCE = 1 V; IC = 1 A | 60 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 2 A | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 100 mA | - | - | 0.5 | V |
| VCEsat | Collector-emitter saturation voltage | IC = 2 A; IB = 200 mA | - | - | 0.6 | V |
| VBE | Base-emitter voltage | VCE = 10 V; IC = 5 mA | - | - | 0.7 | V |
| VBE | Base-emitter voltage | VCE = 1 V; IC = 1 A | - | - | 1 | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | 22 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 50 mA; f = 100 MHz | 40 | 170 | - | MHz |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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