Megain MGC021N04L N channel MOSFET designed for Or ing circuits and synchronous rectification in SMPS

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Product Description

Product Overview

The MGC021N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers low RDS(ON) and is 100% EAS Guaranteed, making it suitable for applications like SMPS Synchronous Rectification, DC/DC Converters, and Or-ing. A Green Device version is available.

Product Attributes

Brand: Megain
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Value	Units	Conditions
Drain-Source Voltage (VDS)	40	V
Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID) @ TC=25, VGS=10V	132	A	TC=25
Continuous Drain Current (ID) @ TC=100, VGS=10V	83	A	TC=100
Pulsed Drain Current (IDM)	528	A	2
Single Pulse Avalanche Energy (EAS)	529	mJ	3
Total Power Dissipation (PD) @ TC=25	83	W	TC=25
Total Power Dissipation (PD) @ TC=100	33	W	TC=100
Storage Temperature Range (TSTG)	-55 to 150
Operating Junction Temperature Range (TJ)	-55 to 150
Thermal Resistance Junction to Ambient (RθJA)	20	Ω/W	1
Thermal Resistance Junction to Case (RθJC)	1.5	Ω/W	1
Drain-Source Breakdown Voltage (BVDSS)	40	V	VGS=0V, ID=250uA
Drain-Source On-state Resistance (RDS(ON))	2.1	mΩ	VGS=10V, ID=20A (Typ)
Drain-Source On-state Resistance (RDS(ON))	2.8	mΩ	VGS=10V, ID=20A (Max)
Drain-Source On-state Resistance (RDS(ON))	2.6	mΩ	VGS=4.5V, ID=10A (Typ)
Drain-Source On-state Resistance (RDS(ON))	3.5	mΩ	VGS=4.5V, ID=10A (Max)
Gate Threshold Voltage (VGS(th))	1.2 to 2.2	V	VGS=VDS, ID=250uA
Drain-Source Leakage Current (IDSS)	1	μA	VDS=40V, VGS=0V (Max)
Gate-Source Leakage Current (IGSS)	±100	nA	VGS=±20V, VDS=0V (Max)
Forward Transconductance (gFS)	28	S	VDS=5V, ID=10A (Typ)
Gate Resistance (Rg)	2.6	Ω	VDS=0V , VGS=0V , f=1MHz (Typ)
Total Gate Charge (Qg)	20	nC	VDS=20V, VGS=10V ID=12A (Typ)
Gate-Source Charge (Qgs)	9	nC	(Typ)
Gate-Drain Charge (Qgd)	11	nC	(Typ)
Turn-on Delay Time (Td(ON))	6.9	nS	VDS=15V, VGS=10V, RL=0.75Ω, RG=3.3Ω (Typ)
Turn-on Rise Time (Tr)	1.7	nS	(Typ)
Turn-off Delay Time (Td(OFF))	30	nS	(Typ)
Turn-off Fall Time (Tf)	15	nS	(Typ)
Input Capacitance (Ciss)	6150	pF	VDS=20V, VGS=0V, F=1MHz (Typ)
Output Capacitance (Coss)	430	pF	(Typ)
Reverse Transfer Capacitance (Crss)	372	pF	(Typ)
Source-Drain Current (Body Diode) (ISD)	132	A
Diode Forward Voltage (VSD)	1.2	V	VGS=0V, IS=20A (Max)

Notes:
1. The maximum current rating is package limited.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. EAS condition: TJ=25,VDD=25V,Vgs=10V,ID=46A,L=0.5mH,RG=25ohm