Nexperia BC847BW115 transistor offering 200 minimum gain and 45 volt VCEO in compact SOT323 SC70 package

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Product Description

Product Overview

The Nexperia BC847xW series comprises NPN general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering three distinct gain selections for versatile use. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance in compact electronic designs.

Product Attributes

Brand: Nexperia
Package Type: SOT323 (SC-70)
Material: Plastic
Technology: NPN General-purpose transistor

Technical Specifications

Model	PNP Complement	Package	VCEO (V)	IC (mA)	hFE (min)	hFE (typ)	hFE (max)	Marking Code
BC847W	BC857W	SOT323 (SC-70)	45	100	110	-	800	1H%
BC847AW	BC857AW	SOT323 (SC-70)	45	100	110	180	220	1E%
BC847BW	BC857BW	SOT323 (SC-70)	45	100	200	290	450	1F%
BC847CW	BC857CW	SOT323 (SC-70)	45	100	420	520	800	1G%

Key Characteristics (Tamb = 25 C unless otherwise specified)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base	-	-	45	V
IC	Collector current	-	-	-	100	mA
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	6	V
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	200	mA
IBM	Peak base current	Single pulse; tp 1 ms	-	-	100	mA
Ptot	Total power dissipation	Tamb 25 C	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Rth(j-a)	Thermal resistance junction to ambient	In free air [1]	-	-	625	K/W
V(BR)CES	Collector-emitter breakdown voltage	IC = 2 mA; VBE = 0 A	45	-	-	V
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA [1]	-	700	-	mV
VBEsat	Base-emitter saturation voltage	IC = 100 mA; IB = 5 mA [2]	-	900	-	mV
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz	100	-	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	1.5	pF
Ce	Emitter capacitance	VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz	-	11	-	pF
NF	Noise figure	IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200Hz	-	2	10	dB