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China Nexperia PMBT4401 215 transistor with 600 mA collector current and AEC Q101 automotive qualification for sale

Nexperia PMBT4401 215 transistor with 600 mA collector current and AEC Q101 automotive qualification

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The Nexperia PMBT4401 is an NPN switching transistor designed for industrial and consumer switching applications. It features high current capability (up to 600 mA) and low voltage operation (up to 40 V). This transistor is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the PMBT4403.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Switching Transistor
  • Package Type: SOT23 (plastic, surface-mounted device)
  • Qualification: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 40 V
IC Collector current - - - 600 mA
hFE DC current gain VCE = 1 V; IC = 150 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - 300 -
VCBO Collector-base voltage open emitter - - 60 V
VEBO Emitter-base voltage open collector - - 6 V
ICM Peak collector current - - - 800 mA
IBM Peak base current - - - 200 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air - 500 - K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; Tamb = 25 C 60 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 1 mA; Tamb = 25 C 40 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 100 A; Tamb = 25 C 6 - - V
ICBO Collector-base cut-off current VCB = 60 V; IE = 0 A; Tamb = 25 C - - 50 nA
IEBO Emitter-base cut-off current VEB = 6 V; IC = 0 A; Tamb = 25 C - - 50 nA
hFE DC current gain VCE = 1 V; IC = 0.1 mA; Tamb = 25 C 20 - - -
hFE DC current gain VCE = 1 V; IC = 1 mA; Tamb = 25 C 40 - - -
hFE DC current gain VCE = 1 V; IC = 10 mA; Tamb = 25 C 80 - - -
hFE DC current gain VCE = 1 V; IC = 150 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 - 300 -
hFE DC current gain VCE = 2 V; IC = 500 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 40 - - -
VCEsat Collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 400 mV
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 750 mV
VBEsat Base-emitter saturation voltage IC = 150 mA; IB = 15 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 950 mV
VBEsat Base-emitter saturation voltage IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 1.2 V
Cc Collector capacitance VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 8 pF
Ce Emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - - 30 pF
fT Transition frequency VCE = 10 V; IC = 20 mA; f = 100 MHz; Tamb = 25 C 250 - - MHz
td Delay time Switching times (between 10 % and 90 % levels) - - 15 ns
tr Rise time Switching times (between 10 % and 90 % levels) - - 20 ns
ton Turn-on time Switching times (between 10 % and 90 % levels) - - 35 ns
ts Storage time Switching times (between 10 % and 90 % levels) - - 200 ns
tf Fall time Switching times (between 10 % and 90 % levels) - - 60 ns
toff Turn-off time IC = 150 mA; IBon = 15 mA; IBoff = -15 mA; Tamb = 25 C - - 250 ns

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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