Nexperia PBSS4140T 215 NPN transistor 40V 1A low VCEsat in SOT23 package for general purpose switching
Product Overview
The Nexperia PBSS4140T is a 40 V, 1 A NPN low VCEsat (BISS) transistor housed in a compact SOT23 plastic package. Designed for general-purpose switching and muting, it offers high current capabilities and improved device reliability due to reduced heat generation. Its applications include LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices. The PNP complement is the PBSS5140T.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23
- Transistor Type: NPN
- Technology: BISS (Low VCEsat)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 40 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 2 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 260 | 500 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 40 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| IC | Collector current | - | - | - | 1 | A |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 1 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | 300 | - | mW |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | 450 | - | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [1] | - | - | 417 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | In free air [2] | - | - | 278 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 40 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 40 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | (collector open) IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 40 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 40 V; IE = 0 A; Tamb = 150 C | - | - | 50 | A |
| ICEO | Collector-emitter cut-off current | (base open) IB = 0 A; VCE = 30 V; Tamb = 25 C | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICES | Collector-emitter cut-off current | VCE = 30 V; Tamb = 25 C | - | - | 100 | nA |
| VCE | Collector-emitter saturation voltage | VCE = 5 V; IC = 1 mA; Tamb = 25 C | 300 | - | - | mV |
| VCE | Collector-emitter saturation voltage | VCE = 5 V; IC = 500 mA; Tamb = 25 C | 300 | - | 900 | mV |
| hFE | DC current gain | VCE = 5 V; IC = 1 A; Tamb = 25 C | 200 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 1 mA; Tamb = 25 C | - | - | 200 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 500 mA; IB = 50 mA; Tamb = 25 C | - | - | 250 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 100 mA; Tamb = 25 C | - | - | 500 | mV |
| RCEsat | Collector-emitter saturation resistance | IC = 500 mA; IB = 50 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | - | 260 | 500 | m |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 100 mA; Tamb = 25 C | - | - | 1.2 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 5 V; IC = 1 A; Tamb = 25 C | - | - | 1.1 | V |
| fT | Transition frequency | VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C | 150 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 10 | pF |
[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated, mounting pad for collector 1 cm.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.