Robust Minos MDT60N06D 60V N Channel Power MOSFET offering high pulsed drain current and heat dissipation
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MDT60N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design, fully characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| On-State Resistance | RDS(ON) | VGS=10V, ID=60A | <15 | m | ||
| On-State Resistance (Typ) | RDS(ON) | VGS=10V, ID=60A | 12 | m | ||
| Continuous Drain Current | ID | 60 | A | |||
| Pulsed Drain Current | IDM | (Note 1) | 200 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Single Pulse Avalanche Energy | EAS | (Note 2) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||||
| Thermal Resistance, Junction-to-Case | RJC | 1.72 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 | A | |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | - | 12 | 15 | m |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | - | 100 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5 | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | - | 7 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=50A VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina