PNP low VCEsat transistor Nexperia PBSS5350Z 135 ideal for DC DC converters and supply line switching
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Product Description
Product Overview
The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high current gain (hFE) at high collector currents, leading to reduced heat generation and improved energy efficiency. It is ideal for applications such as DC/DC converters, supply line switching, battery chargers, LED backlighting, linear voltage regulation (LDO), and as a driver for inductive loads like relays, buzzers, and motors in low supply voltage environments.
Product Attributes
- Brand: Nexperia
- Package Type: SOT223 (SC-73)
- Complementary NPN Transistor: PBSS4350Z
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | -50 | V |
| IC | Collector current | - | - | - | -3 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | -5 | A |
| RCEsat | Collector-emitter saturation resistance | IC = -2 A; IB = -200 mA; Tamb = 25 C [1] | - | 120 | 150 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | -60 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | -6 | V |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | -1 | A |
| Ptot | Total power dissipation | Device mounted on an FR4 PCB, 35 m single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] | - | - | 1.35 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance from junction to ambient | Device mounted on an FR4 PCB, 35 m single-sided copper, tin-plated and standard footprint [1] | - | - | 192 | K/W |
| Rth(j-sp) | Thermal resistance from junction to solder point | - | - | - | 16 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A | -60 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -10 mA; IB = 0 A | -50 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | Collector open; IE = -100 A; IC = 0 A | -6 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -100 | nA |
| hFE | DC current gain | VCE = -2 V; IC = -500 mA | 200 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -2 A; IB = -200 mA [1] | - | - | -300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = -2 A; IB = -200 mA [1] | - | - | -1.2 | V |
| fT | Transition frequency | VCE = -5 V; IC = -100 mA; f = 100 MHz | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 40 | pF |
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