Soft recovery diode MICROCHIP APT40DQ120BG with low forward voltage drop and avalanche energy rating
Product Overview
The APT40DQ120BG is an ultrafast soft recovery rectifier diode designed for high-frequency switching applications. It offers features such as ultrafast recovery times, soft recovery characteristics, low forward voltage, low leakage current, and avalanche energy rating. These attributes translate to benefits like higher switching frequency, reduced switching losses, lower electromagnetic interference (EMI), improved system reliability, and increased power density. The device is suitable for applications including power factor correction (PFC), switch-mode power supplies, inverters/converters, motor controllers, and as anti-parallel, freewheeling, or snubber/clamp diodes.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant, AEC-Q101 qualified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VR | Maximum DC reverse voltage | 1200 | V | |||
| VRRM | Maximum peak repetitive reverse voltage | 1200 | V | |||
| VRWM | Maximum working peak reverse voltage | 1200 | V | |||
| IF(AV) | Maximum average forward current | TC = 112 C, duty cycle = 0.5 | 40 | A | ||
| IF(RMS) | RMS forward current | 63 | A | |||
| IFSM | Non-repetitive forward surge current | TJ = 45 C, 8.3 ms | 210 | |||
| EAVL | Avalanche energy | 1 A, 40 mH | 20 | mJ | ||
| TJ, TSTG | Operating and storage temperature range | 55 | 175 | C | ||
| TL | Lead temperature for 10 seconds | 300 | C | |||
| Thermal and Mechanical Characteristics | ||||||
| RJC | Junction-to-case thermal resistance | 0.61 | C/W | |||
| WT | Package weight | 0.22 | oz | |||
| Package weight | 5.9 | g | ||||
| Torque | Maximum mounting torque | 10 | lb-in | |||
| Torque | Maximum mounting torque | 1.1 | N-m | |||
| Static Characteristics | ||||||
| VF | Forward voltage | IF = 30 A | 2.8 | 3.3 | V | |
| VF | Forward voltage | IF = 60 A | 3.4 | V | ||
| VF | Forward voltage | IF = 30 A, TJ = 125 C | 2.1 | V | ||
| IRM | Maximum reverse leakage current | VR = 1200 V | 100 | A | ||
| IRM | Maximum reverse leakage current | VR = 1200 V, TJ = 125 C | 500 | A | ||
| CJ | Junction capacitance | VR = 200 V | 36 | pF | ||
| Dynamic Characteristics | ||||||
| trr | Reverse recovery time | IF = 1 A, di/dt = 100 A/s, VR = 30 V, TJ = 25 C | 26 | ns | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 350 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 570 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 25 C | 4 | A | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 430 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 2200 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 200 A/s, VR = 800 V, TJ = 125 C | 9 | A | ||
| trr | Reverse recovery time | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 210 | ns | ||
| Qrr | Reverse recovery charge | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 3400 | nC | ||
| IRRM | Maximum reverse recovery current | IF = 40 A, di/dt = 1000 A/s, VR = 800 V, TJ = 125 C | 29 | A | ||
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