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Low Collector Emitter Saturation Voltage Transistor Nexperia PBHV8540X 115 with High DC Current Gain

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Product Description

Product Overview

The Nexperia PBHV8540X is an NPN high-voltage, low VCEsat transistor designed for medium power applications. Packaged in an SOT89 (SC-62) surface-mounted device (SMD) plastic package, this transistor offers high voltage capability and a low collector-emitter saturation voltage (VCEsat). It features high collector current capability (IC and ICM) and high DC current gain (hFE) at high IC. The PBHV8540X is AEC-Q101 qualified, making it suitable for automotive applications. Key applications include LED drivers for LED chain modules, LCD backlighting, automotive motor management, hook switches for wired telecom, and Switch Mode Power Supplies (SMPS).

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN High-Voltage Low VCEsat Transistor
  • Package Type: SOT89 (SC-62)
  • Mounting Type: Surface-Mounted Device (SMD)
  • Qualification: AEC-Q101 Qualified
  • Complementary PNP Transistor: PBHV9040X

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCESM Collector-emitter peak voltage VBE = 0 V - - 500 V
VCEO Collector-emitter voltage (open base) - - 400 V
IC Collector current - - 0.5 A
hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 C 100 200 - -
VCBO Collector-base voltage (open emitter) - - 500 V
VEBO Emitter-base voltage (open collector) - - 6 V
ICM Peak collector current - - 1 A
IBM Peak base current single pulse; tp 1 ms - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - 0.52 W
Ptot Total power dissipation Tamb 25 C [2] - 1.5 W
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -55 150 C
Tstg Storage temperature - -65 150 C
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - 240 K/W
Rth(j-sp) Thermal resistance junction to solder point [2] - 83 K/W
ICBO Collector-base cut-off current VCB = 320 V; IE = 0 A; Tamb = 25 C - 100 nA
IEBO Emitter-base cut-off current VCB = 320 V; IE = 0 A; Tj = 150 C - 10 A
ICES Collector-emitter cut-off current VEB = 4 V; IC = 0 A; Tamb = 25 C - 100 nA
ICES Collector-emitter cut-off current VCE = 320 V; VBE = 0 V; Tamb = 25 C - 100 nA
hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 C 100 200 - -
hFE DC current gain VCE = 10 V; IC = 100 mA; tp 300 s; 0.02; Tamb = 25 C; pulsed 80 150 - -
hFE DC current gain VCE = 10 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 10 20 - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; Tamb = 25 C - 100 200 mV
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 20 mA; Tamb = 25 C - 60 90 mV
VCEsat Collector-emitter saturation voltage IC = 300 mA; IB = 60 mA; Tamb = 25 C - 135 250 mV
VBEsat Base-emitter saturation voltage IC = 300 mA; IB = 60 mA; Tamb = 25 C - 0.91 1.1 V
VBEsat Base-emitter saturation voltage IC = 300 mA; IB = 60 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - - V
td Delay time - - 50 ns
tr Rise time - - 6200 ns
ton Turn-on time - - 6250 ns
ts Storage time - - 800 ns
tf Fall time - - 2200 ns
toff Turn-off time VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 C - 3000 ns
fT Transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C - 30 MHz
Cc Collector capacitance VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 4 pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 165 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.


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