Audio Power Amplification Applications Using Minos MJE2955T PNP Power Transistor with TO220 Package
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Product Description
Product Overview
The MJE2955T is a PNP power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for reliable circuit design. This device is suitable for applications requiring audio power amplification.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Model: MJE2955T
- Package Type: TO-220
Technical Specifications
| Parameter | Symbol | Description | Minimum | Typical | Maximum | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | |||||||
| Storage Temperature | Tstg | -55 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Power Dissipation (Tc=25) | PC | 65 | W | ||||
| Collector Power Dissipation (TA=25) | PC | 2 | W | ||||
| Collector-Base Voltage | VCBO | -100 | V | ||||
| Collector-Emitter Voltage | VCEO | -100 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector Current | IC | -6 | A | ||||
| Base Current | IB | -2 | A | ||||
| Electrical Characteristics (Ta=25) | |||||||
| Collector-Emitter Cutoff Current | ICEO | -0.7 | mA | VCE=-60V, IB=0 | |||
| Collector-Base Cutoff Current | IEBO | -1 | mA | VEB=-5V, IC=0 | |||
| Collector-Emitter Saturation Current | ICES | -400 | A | VCE=-100V, VEB=0 | |||
| DC Current Gain | HFE(1) | 30 | VCE=-4V, IC=-0.3A | ||||
| DC Current Gain | HFE(2) | 15 | 100 | VCE=-4V, IC=-3A | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -1.5 | V | IC=-6A, IB=-600mA | |||
| Base-Emitter On Voltage | VBE(on) | -2.0 | V | VCE=-4V, IC=-6A | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC=-30mA, IB=0 | |||
| Characteristic Frequency | fT | 3.0 | MHz | VCE=-10V, IC=-500mA, f=1MHz | |||
| Pin Configuration (TO-220) | |||||||
| Pin 1 | B | Base | |||||
| Pin 2 | C | Collector | |||||
| Pin 3 | E | Emitter | |||||
Notes:
- Exceeding the maximum ratings of the device may cause permanent failure and affect dependability. Please do not exceed absolute maximum ratings during circuit design.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
- Shenzhen Minos reserves the right to make changes to this specification sheet without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen City
Postal Code: 518025
Phone: 0755-83273777
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