Nexperia BC847DS115 Transistor Pair Featuring Low Collector Capacitance and Matched Gain for Switching
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Product Description
Product Overview
The Nexperia BC847DS is a general-purpose NPN/NPN transistor pair housed in a compact SOT457 (SC-74) SMD plastic package. Designed for switching and amplification applications, this transistor pair offers low collector capacitance and low collector-emitter saturation voltage. Its closely matched current gain, coupled with the absence of mutual interference between transistors, allows for component count reduction and board space savings. The BC847DS is AEC-Q101 qualified, making it suitable for demanding applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT457 (SC-74)
- Certifications: AEC-Q101 Qualified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA | 200 | 300 | 450 | |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 200 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient in free air | [1] | - | - | 500 | K/W |
| Rth(j-sp) | Thermal resistance junction to solder point | - | - | - | 250 | K/W |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A | - | - | 15 | nA |
| ICBO | Collector-base cut-off current | VCB = 30 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 6 V; IC = 0 A | - | - | 100 | nA |
| hFE | DC current gain | VCE = 5 V; IC = 10 A | - | 280 | - | |
| hFE | DC current gain | VCE = 5 V; IC = 2 mA | 200 | 300 | 450 | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | 55 | 100 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 100 mA; IB = 5 mA | - | 200 | 300 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | 755 | 850 | mV |
| VBEsat | Base-emitter saturation voltage | IC = 100 mA; IB = 5 mA | - | 1000 | - | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 2 mA | 580 | 650 | 700 | mV |
| VBE | Base-emitter voltage | VCE = 5 V; IC = 10 mA | - | - | 770 | mV |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; f = 1 MHz | - | 1.9 | - | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = 0 A; f = 1 MHz | - | 11 | - | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | 100 | - | - | MHz |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 10 Hz to 15.7 kHz | - | 1.9 | - | dB |
| NF | Noise figure | VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz | - | 3.1 | - | dB |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 380 | mW |
| Rth(j-a) | Thermal resistance junction to ambient in free air | [1] | - | - | 328 | K/W |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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