High voltage power transistor Minos MJL21194 NPN triple diffused for 100 watt audio amplifier output stages

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Product Description

Product Overview

The MJL21194 is a Minos Silicon NPN triple diffused power transistor designed for power amplifier applications. It is complementary to the MJL21193 and features a high collector voltage of 250V (min), making it recommended for 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads may significantly decrease product reliability even if operating conditions are within absolute maximum ratings.

Product Attributes

Brand: Minos Silicon
Type: NPN Triple Diffused
Complementary to: MJL21193
Package: TO-264

Technical Specifications

Characteristic	Symbol	Rating	Unit	Test Condition	Min	Typ	Max
Absolute Maximum Ratings (Tc=25)
Collector-base voltage	VCBO	400	V
Collector-emitter voltage	VCEO	250	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	16	A
Base current	IB	5	A
Collector power dissipation (Tc=25)	PC	200	W
Junction temperature	Tj	150
Storage temperature range	TSTG	-55~150
Electrical Characteristics (Tc=25)
Collector cut-off current	ICBO		uA	VCB=250V; IE=0		10
Emitter cut-off current	IEBO		uA	VEB=5V; Ic=0		10
Collector-emitter breakdown voltage	V(BR)CEO	250	V	IC=50mA,IB=0
DC current gain	hFE			VCE=5V; IC=8A	20		80
DC current gain	hFE(2)			VCE=5V; IC=16A	8
Collector-emitter saturation voltage	VCE(sat)		V	IC=8A; IB=0.8A		1.4
Collector-emitter saturation voltage	VCE(sat)		V	IC=16A; IB=3.2A		4
Base-emitter voltage	VBE		V	VCE=5V;IC=8A		2.2
Transition frequency	fT		MHz	VCE=10V; IC=1A		4
Thermal Characteristics
Junction-to-Case Thermal Resistance	RJC		/W		0.63