Compact SOT363 transistor pair Nexperia BC846BS 115 with low collector capacitance and matched gain

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Product Description

Product Overview

The Nexperia BC846BS is a general-purpose NPN/NPN transistor pair housed in a compact SOT363 (SC-88) SMD plastic package. Designed for efficiency and space-saving, it offers low collector capacitance, low collector-emitter saturation voltage, and closely matched current gain. This configuration minimizes component count and board space while preventing mutual interference between transistors, making it ideal for general-purpose switching and amplification applications.

Product Attributes

Brand: Nexperia
Package Type: SOT363 (SC-88)

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	Open base	-	-	65	V
IC	Collector current	-	-	-	100	mA
hFE	DC current gain	VCE = 5 V; IC = 2 mA; Tamb = 25 C	200	300	450	-
VCBO	Collector-base voltage	Open emitter	-	-	80	V
VEBO	Emitter-base voltage	Open collector	-	-	6	V
ICM	Peak collector current	-	-	-	200	mA
IBM	Peak base current	Single pulse; tp 1 ms	-	-	200	mA
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	200	mW
Per device
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	300	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-55	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Thermal characteristics
Rth(j-a)	Thermal resistance from junction to ambient in free air	[1]	-	-	625	K/W
Rth(j-sp)	Thermal resistance from junction to solder point	-	-	-	230	K/W
Rth(j-a)	Thermal resistance from junction to ambient in free air	Per device [1]	-	-	416	K/W
Characteristics
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	80	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A; Tamb = 25 C	65	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IC = 0 A; IE = 100 A; Tamb = 25 C	6	-	-	V
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A; Tamb = 25 C	-	-	15	nA
ICBO	Collector-base cut-off current	VCB = 30 V; IE = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 6 V; IC = 0 A; Tamb = 25 C	-	-	100	nA
hFE	DC current gain	VCE = 5 V; IC = 10 A; Tamb = 25 C	-	280	-	-
hFE	DC current gain	VCE = 5 V; IC = 2 mA; Tamb = 25 C	200	300	450	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	55	100	mV
VCEsat	Collector-emitter saturation voltage	IC = 100 mA; IB = 5 mA; Tamb = 25 C	-	200	300	mV
VBEsat	Base-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA; Tamb = 25 C	-	755	850	mV
VBEsat	Base-emitter saturation voltage	IC = 100 mA; IB = 5 mA; Tamb = 25 C	-	1000	-	mV
VBE	Base-emitter voltage	VCE = 5 V; IC = 2 mA; Tamb = 25 C	580	650	700	mV
VBE	Base-emitter voltage	VCE = 5 V; IC = 10 mA; Tamb = 25 C	-	-	770	mV
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	1.9	-	pF
Ce	Emitter capacitance	VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C	-	11	-	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz
NF	Noise figure	VCE = 5 V; IC = 0.2 mA; RS = 2 k; 10 Hz f 15700 Hz; Tamb = 25 C	-	1.9	-	dB
NF	Noise figure	VCE = 5 V; IC = 0.2 mA; RS = 2 k; f = 1 kHz; B = 200 Hz; Tamb = 25 C	-	3.1	-	dB
Package Outline
Package	TSSOP6 (SOT363)	Body dimensions	2.1 x 1.25 x 0.95 mm	-	-	mm
Pitch	0.65 mm	-	-	-	-	mm