PNP high voltage transistor Nexperia PMBTA92 215 in compact SOT23 package for telephony applications
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Product Description
Product Overview
The Nexperia PMBTA92 is a PNP high-voltage transistor designed for surface-mounted applications. Housed in a compact SOT23 plastic package, this transistor offers a low current capability of up to 100 mA and a high voltage rating of up to 300 V. It is an ideal component for applications in telephony and professional communication equipment. Its NPN complement is the PMBTA42.
Product Attributes
- Brand: Nexperia
- Product Type: PNP high-voltage transistor
- Package Type: SOT23
- Complementary NPN Transistor: PMBTA42
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | -300 | V |
| IC | Collector current | - | - | -100 | mA | |
| hFE | DC current gain | VCE = -10 V; IC = -10 mA; pulsed; tp 300 s; 0.02 | 40 | - | - | |
| VCBO | Collector-base voltage | open emitter | - | - | -300 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -5 | V |
| ICM | Peak collector current | - | - | -200 | mA | |
| IBM | Peak base current | single pulse; tp 1 ms | - | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance from junction to ambient | in free air [1] | - | - | 500 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A; Tamb = 25 C | -300 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -1 mA; IB = 0 A; Tamb = 25 C | -300 | - | - | V |
| V(BR)EBO | Emitter-base breakdown voltage | (collector open) IE = -100 A; IC = 0 A; Tamb = 25 C | -5 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -200 V; IE = 0 A; Tamb = 25 C | - | - | -250 | nA |
| IEBO | Emitter-base cut-off current | VEB = -3 V; IC = 0 A; Tamb = 25 C | - | - | -100 | nA |
| VCEsat | Collector-emitter saturation voltage | VCE = -10 V; IC = -1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C | 25 | - | - | V |
| hFE | DC current gain | VCE = -10 V; IC = -10 mA; pulsed; tp 300 s; 0.02 | 40 | - | - | |
| hFE | DC current gain | VCE = -10 V; IC = -30 mA; pulsed; tp 300 s; 0.02 | 25 | - | - | |
| VBEsat | Base-emitter saturation voltage | IC = -20 mA; IB = -2 mA; Tamb = 25 C | - | - | -900 | mV |
| fT | Transition frequency | VCE = -20 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C | 50 | - | - | MHz |
| Cc | Collector capacitance | VCB = -20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 6 | pF |
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