NPN Transistor with Built In Bias Resistors and 100 Milliamp Output Current Nexperia PDTC114EU 115
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Product Description
Product Overview
The Nexperia PDTC114EU is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. Featuring built-in bias resistors (R1 = 10 k, R2 = 10 k), this component simplifies circuit design, reduces component count, and lowers pick-and-place costs. It offers an output current capability of 100 mA and is AEC-Q101 qualified, making it a cost-saving alternative for BC847/857 series in digital applications and suitable for switching loads and controlling IC inputs.
Product Attributes
- Brand: Nexperia
- Product Type: NPN Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 Qualified
- Package Type: SOT323 (SC-70)
- Internal Resistors: R1 = 10 k, R2 = 10 k
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | - | -10 | - | 40 | V |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | in free air | - | - | 625 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 1.1 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 2.5 | 1.8 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | - | 230 | - | MHz |
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