Low IR Value Schottky Diode Minos MBRF20200CT for High Frequency Power Supply and Switching Circuits

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Product Description

Product Overview

The MBRF200CT is a SBD Schottky Barrier Diode optimized for low forward voltage and low reverse leakage current. It is designed for high-frequency switched-mode power supplies, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity.

Product Attributes

Brand: MNS-KX
Origin: Shenzhen Minos (implied by contact information)

Technical Specifications

Parameter	Symbol	Test Conditions	Values	Units
Absolute Maximum Ratings	VRRM		200	V
	IF(AV)	TA=110	20	A
	IFSM	TA=25	200	A
	IFRM	Square wave, 20kHZ	60	A
	Tj		150
	Tstg		-55 to +175
Electrical Characteristics	VBR	VR=200V, IR=100A	200	V
	VF	IF=5.0A	0.80 - 0.85	V
	VF	IF=10.0A	0.86 - 0.93	V
	IR	VR=VRRM	10	A
	IR	Tj=125, VR=200V	2000	A
Thermal Characteristics	RthJC		- 4.0	/W

Package Description

TO-220F

Symbol	MIN	MAX
A	4.35	4.75
A1	2.30	2.70
A2	0.40	0.80
A3	2.10	2.50
b	0.60	1.00
b1	1.00	1.40
c	0.30	0.70
e	2.30	2.70
E	9.80	10.2
E1	6.30	6.70
H	15.6	16.0
H1	8.80	9.20
H2	12.9	13.5
H3	3.10	3.50
G	3.10	3.50
p	3.10	3.50