N Channel Depletion Mode Vertical DMOS Transistor MICROCHIP DN2470K4 G Suitable for Telecom Equipment
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Product Description
DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET
The DN2470 is a low threshold, depletion-mode, normally-on transistor featuring an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure. This device offers high-input impedance, low-input capacitance, and fast switching speeds, making it suitable for a wide range of applications including normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, battery-operated systems, and telecom equipment. Its design is free from secondary breakdown and thermal runaway, providing reliable performance.
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: TO-252 (D-PAK)
- Certifications: Pb-free JEDEC designator for Matte Tin (Sn)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|---|
| Drain-to-source breakdown voltage | BVDSX | 700 | V | VGS = -5.0V, ID= 100A | ||
| Gate-to-source off voltage | VGS(OFF) | -1.5 | -3.5 | V | VDS = 25V, ID= 10A | |
| Change in VGS(OFF) with temperature | VGS(OFF) | -4.5 | mV/C | VDS = 25V, ID= 10A (Note 2) | ||
| Gate body leakage current | IGSS | 100 | nA | VGS = 20V, VDS= 0V | ||
| Drain-to-source leakage current | ID(OFF) | 1.0 | A | VDS = BVDSX, VGS = -10V | ||
| Drain-to-source leakage current | ID(OFF) | 1.0 | mA | VDS = 0.8 BVDSX, VGS = -10V, TA= 125C (Note 2) | ||
| Saturated drain-to-source current | IDSS | 500 | mA | VGS = 0V, VDS= 25V | ||
| Static drain-to-source on-state resistance | RDS(ON) | 42 | VGS = 0V, ID= 100mA | |||
| Change in RDS(ON) with temperature | RDS(ON) | 1.1 | %/C | VGS= 0V, ID= 100mA (Note 2) | ||
| Forward transconductance | GFS | 100 | mmho | VDS= 10V, ID= 100mA | ||
| Input capacitance | CISS | 540 | pF | VGS= -10V, VDS= 25V, f = 1.0 MHz | ||
| Common source output capacitance | COSS | 60 | ||||
| Reverse transfer capacitance | CRSS | 25 | ||||
| Turn-on delay time | td(ON) | 30 | ns | VDD= 25V, ID= 100mA, RGEN= 25, Rise time | ||
| Turn-off delay time | td(OFF) | 45 | ns | |||
| Fall time | tf | 60 | ns | |||
| Diode forward voltage drop | VSD | 1.8 | V | VGS= -5.0V, ISD= 200mA (Note 1) | ||
| Reverse recovery time | trr | 800 | ns | VGS= -5.0V, ISD= 200mA (Note 2) | ||
| Operating and Storage temperature | -55 | 150 | C | |||
| Thermal Resistance, TO-252 (D-PAK) | ja | 132 | C/W | Mounted on FR4 board, 25mm x 25mm x 1.57 mm |
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